Processing and Structure of Quantum Dot Semiconductor Clusters in Glasses

这项研究的主要目标是研究与玻璃基质中嵌入的化合物半导体量子点的加工和分子结构相关的基础科学。具有半导体材料(例如，碲化镉、砷化镓或磷化铟)纳米级团簇的量子点结构是通过对用半导体材料过饱和的玻璃进行经典热处理，并通过将半导体材料从气相沉积到具有可控气孔的玻璃上而形成的。利用差示扫描量热法和差热分析等热分析技术确定了沉积的时间和温度参数。用小角x射线散射、电子显微镜、魔角样品旋转核磁共振光谱对材料进行了表征。

The major goal of this research is to investigate fundamental science associated with processing and molecular structure of compound semiconductor quantum dots embedded in glass matrices. Quantum dot structures having nanometer size clusters of semiconducting materials (for example, cadmium telluride, gallium arsenide, or indium phosphide) are formed by classical thermal treatments of glasses supersaturated with the semiconducting material, and by depositing the semiconducting materials from the vapor phase onto glass with controlled pores. Time and temperature parameters for deposition are determined using thermal analysis techniques, such as differential scanning calorimetry and differential thermal analysis. The materials are being characterized using small angle x-ray scattering, electron microscopy, magic angle sample spinning nuclear magnetic resonance spectroscopy.