Processing and Structure of Quantum Dot Semiconductor Clusters in Glasses

本研究的主要目的是研究镶嵌在玻璃基质中的化合物半导体量子点的加工和分子结构相关的基础科学。量子点结构具有纳米尺寸的半导体材料簇（例如，碲化镉、砷化镓或磷化铟）是通过对半导体材料过饱和的玻璃进行经典热处理，并将半导体材料从气相沉积到具有受控孔隙的玻璃上形成的。沉积的时间和温度参数使用热分析技术确定，如差示扫描量热法和差示热分析。利用小角x射线散射、电子显微镜、魔角样品旋转核磁共振波谱对材料进行了表征。

The major goal of this research is to investigate fundamental science associated with processing and molecular structure of compound semiconductor quantum dots embedded in glass matrices. Quantum dot structures having nanometer size clusters of semiconducting materials (for example, cadmium telluride, gallium arsenide, or indium phosphide) are formed by classical thermal treatments of glasses supersaturated with the semiconducting material, and by depositing the semiconducting materials from the vapor phase onto glass with controlled pores. Time and temperature parameters for deposition are determined using thermal analysis techniques, such as differential scanning calorimetry and differential thermal analysis. The materials are being characterized using small angle x-ray scattering, electron microscopy, magic angle sample spinning nuclear magnetic resonance spectroscopy.