Proposal to Acquire a Rotating Anode X-Ray Generator for Semiconductor Materials Processing Characterization

购买用于半导体材料加工表征的旋转阳极 X 射线发生器的提案

• 批准号: 9006595
• 负责人: Richard Matyi
• 金额: $ 6.58万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-01 至 1991-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9006595&HistoricalAwards=false
• 关键词: Proposal; Acquire; Rotating; Anode; Ray

The requested high intensity rotating anode x-ray generator will be used in conjunction with existing x- ray diffraction instrumentation at the University of Wisconsin-Madison to study the effect of material processing on the defect structure in semiconductors such as CdTe, GaAs, and silicon. Three research programs that will utilize this x-ray source are: (1) The magnitude and origin of surface polish damage in GaAs (2) The effect of Bridgman crystal growth on the defect structures in bulk II-VI semiconductors (3) The evolution of surface and subsurface damage during the reactive ion etching of silicon and GaAs.

所要求的高强度旋转阳极x射线 发电机将与现有的x- 射线衍射仪器在大学 威斯康星-麦迪逊研究材料的影响 半导体中缺陷结构的处理 例如CdTe、GaAs和硅。 三个研究 将利用该X射线源的方案有： (1)表面抛光损伤的大小和来源 （2）坩埚下降法晶体生长对GaAs中GaAs的 体II-VI族半导体中的缺陷结构（3） 表面和亚表面损伤的演变过程中， 硅和GaAs的反应离子蚀刻。