Proposal to Acquire a Rotating Anode X-Ray Generator for Semiconductor Materials Processing Characterization

所要求的高强度旋转阳极X射线发生器将与威斯康星大学麦迪逊分校现有的X射线衍射仪一起使用，以研究材料加工对半导体如CdTe、GaAs和硅中缺陷结构的影响。将利用这种X射线源的三个研究项目是：(1)表面抛光损伤的大小和来源(2)Bridgman晶体生长对块体II-VI半导体中缺陷结构的影响(3)表面和反应离子刻蚀硅和砷化镓过程中的亚表面损伤。

The requested high intensity rotating anode x-ray generator will be used in conjunction with existing x- ray diffraction instrumentation at the University of Wisconsin-Madison to study the effect of material processing on the defect structure in semiconductors such as CdTe, GaAs, and silicon. Three research programs that will utilize this x-ray source are: (1) The magnitude and origin of surface polish damage in GaAs (2) The effect of Bridgman crystal growth on the defect structures in bulk II-VI semiconductors (3) The evolution of surface and subsurface damage during the reactive ion etching of silicon and GaAs.