Quantitative Analysis of Growth Defects in II-VI Semiconductors by X-Ray Diffraction

通过 X 射线衍射定量分析 II-VI 族半导体中的生长缺陷

• 批准号: 9319421
• 负责人: Richard Matyi
• 金额: $ 29.9万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9319421&HistoricalAwards=false
• 关键词: Quantitative; Analysis; Growth; Defects; II

9319421 Matyi The overall goals of this program are (1) to develop advanced analytical techniques based on x-ray diffraction for the quantitative study of crystallographic defects in II-VI semiconductors; (2) to develop a better understanding of the effects of alloying on the crystal defect structure and the process of defect generation; and (3) to articulate the effect of structural defects on the optical properties of these materials. The intrinsic defect structure of the starting materials will be fully characterized using a broad array of advanced x-ray diffraction methods, with particular emphasis given to high resolution triple crystal diffraction and diffuse scattering measurements. We will also explore the usefulness of anomalous transmission and short wavelength x-ray diffraction measurements as alternative methods for defect characterization. In addition to analyzing as-grown samples of Cadmium Telluride and its ternary alloys, samples will be annealed under Group II and Group VI overpressures to alter the defect structure and optical behavior in a controlled fashion. %%% The primary goal of this program is to develop a fundamental- understanding of the growth, processing, and properties of wide bandgap II-VI semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. In addition to these fundamental research goals, the proposed research will lead to a better understanding the relationship between overall II-VI materials growth and processing methodologies and the physical properties of II VI semiconductors. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***

9319421 毛季 该计划的总体目标是：（1）发展基于X射线衍射的先进分析技术，用于II-VI族半导体中晶体缺陷的定量研究;（2）更好地理解合金化对晶体缺陷结构和缺陷产生过程的影响;以及（3）阐明结构缺陷对这些材料的光学性质的影响。 起始材料的固有缺陷结构将使用一系列先进的X射线衍射方法进行充分表征，特别强调高分辨率的三重晶体衍射和漫散射测量。我们还将探讨异常透射和短波长X射线衍射测量的有用性，作为缺陷表征的替代方法。除了分析碲化镉及其三元合金的生长样品外，还将在II组和VI组超压下对样品进行退火，以受控方式改变缺陷结构和光学行为。 %%% 该计划的主要目标是发展一个基本的-宽带隙II-VI半导体材料的生长，加工和性能的理解，使它们可以在各种先进的电子和光子器件的实现利用。 除了这些基本的研究目标，拟议的研究将导致更好地了解整体II-VI材料生长和加工方法与II-VI半导体的物理特性之间的关系。 该计划的一个重要特点是在材料和加工研究的基本和技术重要领域培养研究生和本科生。 这项研究将有助于提高用于计算，信息处理和电信的先进器件和集成电路的一般性能。 ***