Quantitative Analysis of Growth Defects in II-VI Semiconductors by X-Ray Diffraction

9319421 Matyi该计划的总体目标是(1)开发基于X射线衍射的先进分析技术，用于定量研究II-VI半导体中的晶体缺陷；(2)更好地了解合金化对晶体缺陷结构的影响和缺陷产生的过程；以及(3)阐明结构缺陷对这些材料光学性能的影响。使用一系列先进的X射线衍射方法，特别是高分辨率的三晶衍射和漫反射测量，将充分表征起始材料的本征缺陷结构。我们还将探索异常透射率和短波x射线衍射测量作为缺陷表征的替代方法的有效性。除了分析生长的碲化镉及其三元合金的样品外，样品还将在第二组和第六组超压下进行热处理，以受控的方式改变缺陷结构和光学行为。本计划的主要目标是对宽带隙II-VI半导体材料的生长、工艺和性能有一个基本的了解，以便它们能够被用于实现各种先进的电子和光子器件。除了这些基本研究目标外，拟议的研究还将有助于更好地了解II-VI材料的总体生长和加工方法与II-VI半导体的物理性质之间的关系。该计划的一个重要特点是在材料和工艺研究的基础和技术方面对研究生和本科生进行培训。这项研究将有助于提高用于计算、信息处理和电信的先进器件和集成电路的综合性能。***

9319421 Matyi The overall goals of this program are (1) to develop advanced analytical techniques based on x-ray diffraction for the quantitative study of crystallographic defects in II-VI semiconductors; (2) to develop a better understanding of the effects of alloying on the crystal defect structure and the process of defect generation; and (3) to articulate the effect of structural defects on the optical properties of these materials. The intrinsic defect structure of the starting materials will be fully characterized using a broad array of advanced x-ray diffraction methods, with particular emphasis given to high resolution triple crystal diffraction and diffuse scattering measurements. We will also explore the usefulness of anomalous transmission and short wavelength x-ray diffraction measurements as alternative methods for defect characterization. In addition to analyzing as-grown samples of Cadmium Telluride and its ternary alloys, samples will be annealed under Group II and Group VI overpressures to alter the defect structure and optical behavior in a controlled fashion. %%% The primary goal of this program is to develop a fundamental- understanding of the growth, processing, and properties of wide bandgap II-VI semiconductor materials so that they can be exploited in the realization of a variety of advanced electronic and photonic devices. In addition to these fundamental research goals, the proposed research will lead to a better understanding the relationship between overall II-VI materials growth and processing methodologies and the physical properties of II VI semiconductors. An important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area of materials and processing research. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***