Quantitative Analysis of Growth Defects in II-VI Semiconductors by X-Ray Diffraction

研究的目的是用x射线衍射法研究碲化镉和含锌、锰的碲化镉中缺陷的性质。这项研究集中在用动态衍射消光距离来描绘亚晶，用绝对衍射强度测量来评估原生和次生消光的相对贡献，以及使用三晶衍射技术来分离动态和运动衍射强度。样品将使用垂直桥联方法生长为大块晶体。

The objective of the investigation is to study the nature of the defects in cadmium telluride and cadmium telluride with zinc and manganese using x-ray diffraction techniques. The study concentrates upon the use of dynamic diffraction extinction distance for delineation of subgrains, the measurement of absolute diffracted intensities to assess the relative contributions of primary and secondary extinction, and the use of triple crystal diffraction techniques to separate the dynamic and kinematic diffraction intensities. The specimens will be grown as bulk crystals using the vertical Bridgement method.