Quantitative Analysis of Growth Defects in II-VI Semiconductors by X-Ray Diffraction

通过 X 射线衍射定量分析 II-VI 族半导体中的生长缺陷

• 批准号: 8907372
• 负责人: Richard Matyi
• 金额: $ 22.4万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-01-15 至 1993-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8907372&HistoricalAwards=false
• 关键词: Quantitative; Analysis; Growth; Defects; II

The objective of the investigation is to study the nature of the defects in cadmium telluride and cadmium telluride with zinc and manganese using x-ray diffraction techniques. The study concentrates upon the use of dynamic diffraction extinction distance for delineation of subgrains, the measurement of absolute diffracted intensities to assess the relative contributions of primary and secondary extinction, and the use of triple crystal diffraction techniques to separate the dynamic and kinematic diffraction intensities. The specimens will be grown as bulk crystals using the vertical Bridgement method.

该研究的目的是利用 X 射线衍射技术研究碲化镉以及含锌和锰的碲化镉中的缺陷性质。 该研究集中于使用动态衍射消光距离来描绘亚晶粒，测量绝对衍射强度以评估初级和次级消光的相对贡献，以及使用三晶衍射技术来分离动态和运动衍射强度。 样品将使用垂直桥接法生长为块状晶体。