Engineering Research Equipment Grant: Electrochemical Profiler/Photovoltage Spectroscopy

工程研究设备资助：电化学分析仪/光电压光谱仪

• 批准号: 9006989
• 负责人: Gary Wicks
• 金额: $ 5万
• 依托单位: University of Rochester
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-15 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9006989&HistoricalAwards=false
• 关键词: Engineering; Research; Equipment; Grant; Electrochemical

The requested electrochemical profiler/photovoltage spectroscopy unit brings new capabilities to the recently established optoelectronics facility at the Institute of Optics, for epitaxial growth, characterization and fabrication of III-V heterstructure optoelectronics devices. The profile/photovoltage instrumentation is required for many aspects of an extensive research program that includes the investigation of quantum well lasers and modulators grown on (111) substrates (for low threshold and higher modulation frequency lasers, and larger electro-optic effect), quantum well lasers with doped active regions (for higher gain), novel circularly symmetric surface emitting laser structures, pseudomorphic GaInAs quantum well lasers (for lasing in the wavelength range of 860 to 110 nm., a region previously inaccessible to high efficiency diode lasers), quantum well lasers structures with dry etched facets (to enable integration of diode lasers), fast electro-optic modulators (for high speed phase and intensity modulation of light), an innovative approach to the disordering of superlattices by impurity diffusions (using applied electric fields during annealing) and the use of such selectively disordered structures in planar optical structures (lasers, waveguides, gratings electro-optic modulators). These research programs compliment the ongoing effort in indirect bandgap semiconductors (isoelectronic impurity complexes in indirect bandgap semiconductors, low noise avalanche photodiodes and nonlinear optical interactions in silicon on insulator structures), also at the Institute of Optics. The facility for growth, characterization and device fabrication of optoelectronic III-V semiconductors presently includes a molecular beam epitaxy machine, Raman, photoluminescence and excitation spectroscopy, photolithography, chemically assisted ion beam etching and rapid thermal annealing. The electrochemical profiler and photovoltage spectroscopy unit will be used to measure carrier concentration and bandgap profiles in III-V and Si state of the art optoelectronic materials and devices.

所要求的电化学分析器/光电压光谱单元为光学研究所最近建立的光电子设备带来了新的能力，用于外延生长。III-V异质结构光电器件的表征与制备。剖面/光电压仪器是一个广泛的研究项目的许多方面所需要的，包括在（111）衬底上生长的量子阱激光器和调制器（用于低阈值）的研究更高调制频率的激光器，更大的电光效应)，掺杂有源区的量子阱激光器（用于更高的增益），新型圆对称表面发射激光器结构，伪晶GaInAs量子阱激光器（用于在860至110纳米的波长范围内激光，这是以前高效二极管激光器无法达到的区域）；具有干蚀刻刻面的量子阱激光器结构（使二极管激光器集成），快速电光调制器（用于光的高速相位和强度调制），一种由杂质扩散引起的超晶格无序化的创新方法（在退火过程中使用外加电场）以及在平面上使用这种选择性无序结构光学结构（激光器、波导、光栅电光调制器）。这些研究项目对间接带隙半导体(间接带隙半导体中的等电子杂质配合物，低噪音雪崩光电二极管和绝缘体结构上硅的非线性光学相互作用)，也在光学研究所。目前，光电子III-V半导体的生长、表征和器件制造设施包括分子束外延机、拉曼、光致发光和激发光谱、光刻，化学辅助离子束蚀刻和快速热退火。电化学剖面仪和光电压光谱单元将用于测量载流子浓度和带隙分布在III-V和Si状态的最先进的光电材料和设备。