Engineering Research Equipment Grant: Electrochemical Profiler/Photovoltage Spectroscopy

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The requested electrochemical profiler/photovoltage spectroscopy unit brings new capabilities to the recently established optoelectronics facility at the Institute of Optics, for epitaxial growth, characterization and fabrication of III-V heterstructure optoelectronics devices. The profile/photovoltage instrumentation is required for many aspects of an extensive research program that includes the investigation of quantum well lasers and modulators grown on (111) substrates (for low threshold and higher modulation frequency lasers, and larger electro-optic effect), quantum well lasers with doped active regions (for higher gain), novel circularly symmetric surface emitting laser structures, pseudomorphic GaInAs quantum well lasers (for lasing in the wavelength range of 860 to 110 nm., a region previously inaccessible to high efficiency diode lasers), quantum well lasers structures with dry etched facets (to enable integration of diode lasers), fast electro-optic modulators (for high speed phase and intensity modulation of light), an innovative approach to the disordering of superlattices by impurity diffusions (using applied electric fields during annealing) and the use of such selectively disordered structures in planar optical structures (lasers, waveguides, gratings electro-optic modulators). These research programs compliment the ongoing effort in indirect bandgap semiconductors (isoelectronic impurity complexes in indirect bandgap semiconductors, low noise avalanche photodiodes and nonlinear optical interactions in silicon on insulator structures), also at the Institute of Optics. The facility for growth, characterization and device fabrication of optoelectronic III-V semiconductors presently includes a molecular beam epitaxy machine, Raman, photoluminescence and excitation spectroscopy, photolithography, chemically assisted ion beam etching and rapid thermal annealing. The electrochemical profiler and photovoltage spectroscopy unit will be used to measure carrier concentration and bandgap profiles in III-V and Si state of the art optoelectronic materials and devices.