Growth of Phosphides and Arsenide Phosphides by Solid SourceMolecular Beam Epitaxy

9315998这项建议涉及分子束外延技术的一项进步，它解决了使用固体磷源的早期困难，并使含磷材料的生长质量至少与气态源技术相同。具体地说，建议进一步推广在阀流出池中使用磷的固体电荷生长磷化物的初步结果，并将这一方法扩展到使用固态磷和砷阀流来生长砷/磷合金和砷/磷异质结。该项目将全面研究固体源分子束外延生长参数(生长温度、束流通量、界面生长中断时间、V组二聚体与四聚体种类、不同磷供应商等)的影响。关于材料特性。材料特性将通过各种电学和光学测量进行评估。材料的最终表征将是材料在器件中的性能，例如二极管激光器(AlGaInP/GaAs和GaInAsP/InP)和异质结双极晶体管。大多数这些材料和设备的表征将在内部完成，但将与来自其他大学和工业研究实验室的研究人员进行大量合作。该项目的第二个方面涉及MBE硬件问题，如泵浦；处理MBE机器中的易燃沉积物；以及光束控制、稳定性和开关。将需要对硬件配置和设计进行迭代，以优化具有固体磷源的系统的运行。这一计划的成功将使有阀门的固体源分子束外延与气源分子束外延(GSMBE)和金属有机气相外延(OMPVE)具有同等(甚至更好)的能力，从而消除了使用砷和磷化氢的需要。由此带来的安全和成本的改善将使那些已经在重要的含磷半导体领域的人受益，并向那些目前不愿意或不能使用有毒气体的人开放这一领域。***

9315998 Wicks This proposal concerns an advance in the technology of molecular beam epitaxy (MBE) that the solves the earlier difficulties with the use of solid phosphorus sources and enables the phosphine-free (and arsine-free) growth of phosphorus containing materials of quality at least equal to those of the gas source techniques. Specifically, it is proposed to further preliminary results obtained on the use of solid charges of phosphorus in valved effusion cells for the growth of phosphides, and to extend this approach to the use of solid phosphorus and arsenic valved effusion for the growth of arsenide/phosphide alloys and arsenide/phosphide heterojunctions. The project will be a comprehensive study of the influence of solid source MBE growth parameters (growth temperature, beam fluxes, duration of growth interruptions at interfaces, group V dimer vs. tetramer species, different vendors of phosphorus, etc.) on materials characteristics. Materials characteristics will be evaluated with a variety of electrical and optical measurements. The ultimate characterization of materials will be the performance of the materials in devices, such as diode lasers (AlGaInP/GaAs and GaInAsP/InP) and heterojunction bipolar transistors. Most of these materials and device characterizations will be done in-house, however a significant amount of collaboration will occur with researchers from other universities and industrial research laboratories. A second aspect of the project is concerned with MBE hardware issues such as pumping; dealing with flammable deposits in the MBE machine; and beam control, stability, and switching. Iterations on hardware configurations and designs will be required to optimize the operation of the system with solid phosphorous sources. Success in this proposed program would establish that valved, solid source MBE has equivalent (or perhaps even superior) capabilities to those of gas source MBE (GSMBE) and organometallic vapor phase epitaxy (OMPVE), thereby eliminating th e need to use arsine and phosphine. The resulting improvements in safety and cost would benefit those already in the important field of phosphorous-containing semiconductors, and open up the field to those who are not presently willing or able to use toxic gases. ***