Growth of Phosphides and Arsenide Phosphides by Solid SourceMolecular Beam Epitaxy

这一建议涉及分子束外延（MBE）技术的一个进步，它解决了以前使用固体磷源的困难，并使无磷化氢（和无砷）的含磷材料的生长质量至少与气源技术相当。具体来说，我们建议进一步利用固体磷电荷在阀式积液细胞中生长磷化物的初步结果，并将这种方法扩展到使用固体磷和砷阀式积液生长砷化物/磷化物合金和砷化物/磷化物异质结。该项目将全面研究固体源MBE生长参数（生长温度、光束通量、界面生长中断时间、V族二聚体与四聚体物种、不同磷供应商等）对材料特性的影响。材料特性将通过各种电学和光学测量来评估。材料的最终表征将是材料在器件中的性能，例如二极管激光器（AlGaInP/GaAs和GaInAsP/InP）和异质结双极晶体管。大多数材料和器件的特性将在内部完成，但将与其他大学和工业研究实验室的研究人员进行大量合作。项目的第二个方面涉及MBE硬件问题，如泵送；处理MBE机内可燃沉积物；以及波束控制、稳定性和开关。将需要对硬件配置和设计进行迭代，以优化具有固体磷源的系统的操作。该计划的成功将证明，有阀的固体源MBE具有与气源MBE （GSMBE）和有机金属气相外延（OMPVE）相当（甚至更好）的能力，从而消除了使用砷和磷化氢的需要。由此带来的安全性和成本方面的改进将使那些已经在含磷半导体这一重要领域的人受益，并为那些目前不愿意或不能使用有毒气体的人打开这一领域的大门。＊＊＊

9315998 Wicks This proposal concerns an advance in the technology of molecular beam epitaxy (MBE) that the solves the earlier difficulties with the use of solid phosphorus sources and enables the phosphine-free (and arsine-free) growth of phosphorus containing materials of quality at least equal to those of the gas source techniques. Specifically, it is proposed to further preliminary results obtained on the use of solid charges of phosphorus in valved effusion cells for the growth of phosphides, and to extend this approach to the use of solid phosphorus and arsenic valved effusion for the growth of arsenide/phosphide alloys and arsenide/phosphide heterojunctions. The project will be a comprehensive study of the influence of solid source MBE growth parameters (growth temperature, beam fluxes, duration of growth interruptions at interfaces, group V dimer vs. tetramer species, different vendors of phosphorus, etc.) on materials characteristics. Materials characteristics will be evaluated with a variety of electrical and optical measurements. The ultimate characterization of materials will be the performance of the materials in devices, such as diode lasers (AlGaInP/GaAs and GaInAsP/InP) and heterojunction bipolar transistors. Most of these materials and device characterizations will be done in-house, however a significant amount of collaboration will occur with researchers from other universities and industrial research laboratories. A second aspect of the project is concerned with MBE hardware issues such as pumping; dealing with flammable deposits in the MBE machine; and beam control, stability, and switching. Iterations on hardware configurations and designs will be required to optimize the operation of the system with solid phosphorous sources. Success in this proposed program would establish that valved, solid source MBE has equivalent (or perhaps even superior) capabilities to those of gas source MBE (GSMBE) and organometallic vapor phase epitaxy (OMPVE), thereby eliminating th e need to use arsine and phosphine. The resulting improvements in safety and cost would benefit those already in the important field of phosphorous-containing semiconductors, and open up the field to those who are not presently willing or able to use toxic gases. ***