Growth of Phosphides and Arsenide Phosphides by Solid SourceMolecular Beam Epitaxy

固源分子束外延生长磷化物和砷化物磷化物

• 批准号: 9315998
• 负责人: Gary Wicks
• 金额: $ 27.77万
• 依托单位: University of Rochester
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9315998&HistoricalAwards=false
• 关键词: Growth; Phosphides; Arsenide; Solid; SourceMolecular

9315998 Wicks This proposal concerns an advance in the technology of molecular beam epitaxy (MBE) that the solves the earlier difficulties with the use of solid phosphorus sources and enables the phosphine-free (and arsine-free) growth of phosphorus containing materials of quality at least equal to those of the gas source techniques. Specifically, it is proposed to further preliminary results obtained on the use of solid charges of phosphorus in valved effusion cells for the growth of phosphides, and to extend this approach to the use of solid phosphorus and arsenic valved effusion for the growth of arsenide/phosphide alloys and arsenide/phosphide heterojunctions. The project will be a comprehensive study of the influence of solid source MBE growth parameters (growth temperature, beam fluxes, duration of growth interruptions at interfaces, group V dimer vs. tetramer species, different vendors of phosphorus, etc.) on materials characteristics. Materials characteristics will be evaluated with a variety of electrical and optical measurements. The ultimate characterization of materials will be the performance of the materials in devices, such as diode lasers (AlGaInP/GaAs and GaInAsP/InP) and heterojunction bipolar transistors. Most of these materials and device characterizations will be done in-house, however a significant amount of collaboration will occur with researchers from other universities and industrial research laboratories. A second aspect of the project is concerned with MBE hardware issues such as pumping; dealing with flammable deposits in the MBE machine; and beam control, stability, and switching. Iterations on hardware configurations and designs will be required to optimize the operation of the system with solid phosphorous sources. Success in this proposed program would establish that valved, solid source MBE has equivalent (or perhaps even superior) capabilities to those of gas source MBE (GSMBE) and organometallic vapor phase epitaxy (OMPVE), thereby eliminating th e need to use arsine and phosphine. The resulting improvements in safety and cost would benefit those already in the important field of phosphorous-containing semiconductors, and open up the field to those who are not presently willing or able to use toxic gases. ***

该建议涉及分子束外延（MBE）技术的进步，该技术解决了使用固体磷源的早期困难，并且能够无膦（和无砷化氢）生长质量至少与气体源技术相同的含磷材料。 具体地说，它建议进一步的初步结果上获得的使用固体电荷的磷在阀泻流细胞的磷化物的生长，并将这种方法扩展到使用固体磷和砷阀泻流砷化物/磷化物合金和砷化物/磷化物异质结的生长。 该项目将全面研究固体源MBE生长参数（生长温度、束流通量、界面处生长中断的持续时间、V族二聚体与四聚体物种、不同磷供应商等）的影响。材料的特性。 材料特性将通过各种电气和光学测量进行评估。 材料的最终特性将是器件中材料的性能，例如二极管激光器（AlGaInP/GaAs和GaInAsP/InP）和异质结双极晶体管。 大多数材料和器件表征将在内部完成，但将与其他大学和工业研究实验室的研究人员进行大量合作。 该项目的第二个方面涉及MBE硬件问题，例如泵送;处理MBE机器中的易燃沉积物;以及光束控制，稳定性和切换。 需要对硬件配置和设计进行迭代，以优化具有固体磷源的系统的操作。 该计划的成功将证明带阀门的固体源分子束外延具有与气体源分子束外延（GSMBE）和有机金属气相外延（OMPVE）相当（甚至上级）的能力，从而消除了使用砷化氢和磷化氢的需要。 由此带来的安全性和成本的改善将使那些已经在含磷半导体这一重要领域的人受益，并为那些目前不愿意或不能使用有毒气体的人打开了这一领域。 ***