Bipolar Transistors in Small Bandgap Semiconductors

小带隙半导体中的双极晶体管

• 批准号: 0070131
• 负责人: Gary Wicks
• 金额: $ 28万
• 依托单位: University of Rochester
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-01 至 2003-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0070131&HistoricalAwards=false
• 关键词: Bipolar; Transistors; Small; Bandgap; Semiconductors

AbstractBipolar transistors that operate at a lower voltage than existing devices would have a big impact on wireless communications and other battery-powered applications. The operating voltage of a bipolar transistor is determined by the bandgap of the constituent semiconductor, thus bipolar transistors in low bandgap semiconductors are needed.The only viable semiconductor family with lower bandgaps than those already used for bipolar transistors is the so-called 6.1 material family, named after the value of their lattice constant.The heterojunction bipolar transistor (HBT) is the prevalent bipolar transistor design in III-V semiconductor material families. It would seem natural to develop HBT's in the low bandgap 6.1 materials, but this cannot be done. The HBT is incompatible with the 6.1 materials, so an alternate type of bipolar transistor is sought. Such a transistor is the tunneling emitter bipolar transistor (TEBT). This program will study the TEBT's in the low bandgap 6.1 semiconductors. The effort will be along three lines: physics, materials and device engineering. The physics involves certain tunneling processes required by the TEBT. The materials work is the development of the epitaxial structures for the TEBT in the 6.1 materials. The device engineering (and fabrication and testing) of TEBT's will initially aim at a transistor exhibiting a substantial (40) dc current gain, and follow up with engineering the device for rf performance.

双极晶体管的工作电压低于现有器件，这将对无线通信和其他电池供电的应用产生重大影响。双极晶体管的工作电压由组成半导体的带隙决定，因此需要低带隙半导体中的双极晶体管。唯一可行的半导体家族具有比已经用于双极晶体管的那些更低的带隙是所谓的6.1材料家族，异质结双极晶体管（HBT）是III-V族半导体材料族中流行的双极晶体管设计。在低带隙6.1材料中开发HBT似乎是很自然的，但这是不可能做到的。HBT与6.1材料不兼容，因此寻求替代类型的双极晶体管。这种晶体管是隧道发射极双极晶体管（TEBT）。本计划将研究低带隙6.1半导体中的TEBT。这项工作将沿着三条路线进行：物理学、材料和设备工程。物理学涉及TEBT所需的某些隧道过程。材料工作是在6.1材料中开发TEBT的外延结构。TEBT的器件工程（以及制造和测试）将首先针对表现出相当大的（40）直流电流增益的晶体管，然后针对射频性能设计器件。