RIA: Modeling Redistribution of Substitutional Impurities in Heavily-Doped Silicon

RIA：重掺杂硅中替代杂质的重新分布建模

• 批准号: 9009591
• 负责人: Scott Dunham
• 金额: $ 6万
• 依托单位: Trustees of Boston University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-08-15 至 1993-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9009591&HistoricalAwards=false
• 关键词: RIA; Modeling; Redistribution; Substitutional; Impurities

Substitutional dopants in silicon diffuse via interactions with point defects (interstitials and vacancies). Simulators which model the fabrication of two dimensional integrated circuit structures and explicitly consider point defects have recently been developed (i.e., SUPREM IV), but in order for them to accurately predict device structures, a great deal of work remains in developing and quantifying models. The goal of this work is to develop basic quantitative physical models of substitutional dopant diffusion and precipitation/clustering for such simulators which can consistently predict the redistribution of dopants over the full range of fabrication conditions: in lightly and heavily doped materials, enhanced and retarded diffusion under conditions of point defect injection and extraction. We will analyze existing experimental observations of dopant diffusion under equilibrium and non-equilibrium conditions and also conduct new experiments to produce models which can be incorporated into future fabrication simulators.

硅中的代位掺杂通过与点缺陷(间隙和空位)的相互作用扩散。最近开发了模拟二维集成电路结构的制造并明确考虑点缺陷的模拟器(即Suprem IV)，但为了使其准确地预测器件结构，在开发和量化模型方面仍然存在大量的工作。这项工作的目标是为这样的模拟器开发替代掺杂扩散和沉淀/聚集的基本定量物理模型，该模型能够在整个制造条件范围内一致地预测掺杂的再分布：在轻掺杂和重掺杂材料中，点缺陷注入和提取条件下的增强和抑制扩散。我们将分析现有的平衡和非平衡条件下掺杂扩散的实验观测结果，并进行新的实验以产生可以整合到未来制造模拟器中的模型。