RIA: Modeling Redistribution of Substitutional Impurities in Heavily-Doped Silicon

硅中的替代掺杂剂扩散通孔 与点缺陷的相互作用（材料和 空缺）。 模拟器模拟制造 二维集成电路结构， 明确考虑点缺陷最近被 开发的（即，第四，为了让他们 为了准确预测器件结构， 仍需努力建立和量化模型。 这项工作的目标是发展基本的定量 替代掺杂剂扩散的物理模型， 用于这种模拟器的沉淀/聚类， 一致地预测掺杂剂的重新分布， 全范围的制造条件：在轻微和 重掺杂材料，增强和延迟 点缺陷注入扩散 和提取。 我们将分析现有的实验 平衡状态下掺杂剂扩散的观测 和非平衡条件，并进行新的 实验来制作模型， 未来的制造模拟器。

Substitutional dopants in silicon diffuse via interactions with point defects (interstitials and vacancies). Simulators which model the fabrication of two dimensional integrated circuit structures and explicitly consider point defects have recently been developed (i.e., SUPREM IV), but in order for them to accurately predict device structures, a great deal of work remains in developing and quantifying models. The goal of this work is to develop basic quantitative physical models of substitutional dopant diffusion and precipitation/clustering for such simulators which can consistently predict the redistribution of dopants over the full range of fabrication conditions: in lightly and heavily doped materials, enhanced and retarded diffusion under conditions of point defect injection and extraction. We will analyze existing experimental observations of dopant diffusion under equilibrium and non-equilibrium conditions and also conduct new experiments to produce models which can be incorporated into future fabrication simulators.