Nuclear Magnetic Resonance Studies of Hydrogen in Crystalline Semiconductors

本研究的目的是利用核磁共振波谱来阐明晶体半导体钝化缺陷周围的氢微结构。定量的核磁共振测量将表征硅中钝化缺陷周围的氢以及体硅中的体分子氢。研究将从重掺杂硅中的硼-氢络合物开始，然后扩展到铝、镓和铟等其他掺杂，并最终可能导致对锗中掺杂的研究。质子和其他原子核的核磁共振参数，如四极耦合、化学位移、偶极振荡和弛豫时间将被确定，并与位置对称性、电场梯度、键长和原子在低温和高温下的迁移率有关。这些结果将对理解氢在半导体工艺中的作用以及确认钝化现象的理论模型和计算具有重要意义。

The goal of this research is to elucidate the hydrogen microstructure surrounding passivated defects on crystalline semiconductors employing nuclear magnetic resonance (NMR) spectroscopy. Quantitative NMR measurements characterizing hydrogen surrounding passivated defects in silicon and also bulk molecular hydrogen in bulk silicon will be made. Studies will be initiated with the boron-hydrogen complex in heavily doped silicon and then extended to other dopants such as aluminum, gallium and indium, and could eventually lead to studies of dopants in germanium. Proton and other nuclei's NMR parameters such as quadrupolar couplings, chemical shifts, dipolar oscillations, and relaxation times will be determined and related to site symmetries, electric field gradients, bond lengths, and atomic mobilities at low and elevated temperatures. These results will be important in understanding the role of hydrogen in semiconductor processing and in confirming theoretical models and calculations of passivation phenomena.