Nuclear Magnetic Resonance Studies of Hydrogen in Crystalline Semiconductors

本研究的目的是利用核磁共振（NMR）光谱分析晶体半导体钝化缺陷周围的氢微观结构。定量核磁共振测量表征氢周围的钝化缺陷在硅和块状分子氢块状硅将进行。研究将从重掺杂硅中的硼氢复合物开始，然后扩展到其他掺杂物，如铝、镓和铟，最终可能导致锗掺杂物的研究。质子和其他核的核磁共振参数，如四极耦合、化学位移、偶极振荡和弛豫时间将被确定，并与低温和高温下的位置对称性、电场梯度、键长和原子迁移率有关。这些结果对于理解氢在半导体加工中的作用以及确认钝化现象的理论模型和计算具有重要意义。

The goal of this research is to elucidate the hydrogen microstructure surrounding passivated defects on crystalline semiconductors employing nuclear magnetic resonance (NMR) spectroscopy. Quantitative NMR measurements characterizing hydrogen surrounding passivated defects in silicon and also bulk molecular hydrogen in bulk silicon will be made. Studies will be initiated with the boron-hydrogen complex in heavily doped silicon and then extended to other dopants such as aluminum, gallium and indium, and could eventually lead to studies of dopants in germanium. Proton and other nuclei's NMR parameters such as quadrupolar couplings, chemical shifts, dipolar oscillations, and relaxation times will be determined and related to site symmetries, electric field gradients, bond lengths, and atomic mobilities at low and elevated temperatures. These results will be important in understanding the role of hydrogen in semiconductor processing and in confirming theoretical models and calculations of passivation phenomena.