Nuclear Magnetic Resonance Studies of Hydrogen in Crystalline Semiconductors

这项研究的目的是阐明氢 晶体上钝化缺陷周围的微结构 采用核磁共振（NMR）的半导体 谱 定量NMR测量表征 硅中钝化缺陷周围的氢， 将在体硅中产生分子氢。 研究将 用重掺杂硅中的硼-氢络合物引发 然后扩展到其它掺杂剂如铝、镓和 铟，并可能最终导致掺杂剂的研究， 锗。 质子和其他原子核的NMR参数， 四极耦合，化学位移，偶极振荡，和 弛豫时间将被确定并与位置对称性相关， 电场梯度、键长和原子迁移率 低温和高温。 这些结果将是重要的， 了解氢在半导体加工中的作用， 在确认钝化的理论模型和计算中 现象。

The goal of this research is to elucidate the hydrogen microstructure surrounding passivated defects on crystalline semiconductors employing nuclear magnetic resonance (NMR) spectroscopy. Quantitative NMR measurements characterizing hydrogen surrounding passivated defects in silicon and also bulk molecular hydrogen in bulk silicon will be made. Studies will be initiated with the boron-hydrogen complex in heavily doped silicon and then extended to other dopants such as aluminum, gallium and indium, and could eventually lead to studies of dopants in germanium. Proton and other nuclei's NMR parameters such as quadrupolar couplings, chemical shifts, dipolar oscillations, and relaxation times will be determined and related to site symmetries, electric field gradients, bond lengths, and atomic mobilities at low and elevated temperatures. These results will be important in understanding the role of hydrogen in semiconductor processing and in confirming theoretical models and calculations of passivation phenomena.