Matrix Isolation Study of Reactive Intermediates Relevant to Thermal and Laser-Assisted Chemical Vapor Deposition

奥尔特教授得到了实验基金会的资助。 物理化学计划，以分离和表征 生产过程中产生的重要化学中间体 化学气相沉积工艺通过将它们捕获在 超冷固态氩基质及其分子鉴定 结构使用光谱学。 这些研究对于 对化学蒸气中所涉及的机制的理解 沉积，用于生长薄的主要技术之一， 用于半导体工业的薄膜和涂层 微电子器件制造和太阳能 转换应用程序。 基质隔离技术的独特功能将 可用于分离和表征重要化学品 化学气相沉积（CVD）过程中存在的中间体 流程. 这些结果将提高我们对 化学结构和键合这些重要的，不寻常的 化学中间体，并将导致增加 了解均相气相过程， CVD中涉及的反应步骤的一部分。反应 途径和中间体将被检查的热和 III-V和II-VI半导体系统中的激光诱导CVD， 还有非晶硅。 矩阵辅助技术 也将采用隔离，包括低温减薄 膜形成、缓慢升温光谱和气相 红外光谱法

Prof. Ault is supported by a grant from the Experimental Physical Chemistry Program to isolate and characterize the important chemical intermediates which are produced during chemical vapor deposition processes by trapping them in an ultracold solid argon matrix and identifying their molecular structure using spectroscopy. These studies are important to the understanding of the mechanisms involved in chemical vapor deposition, one of the primary techniques used for growing thin films and coatings used in the semiconductor industry for the fabrication of microelectronic devices and in solar energy conversion applications. The unique capabilities of the matrix isolation technique will be exploited to isolate and characterize important chemical intermediates present during chemical vapor deposition (CVD) processes. These results will enhance our knowledge of the chemical structure and bonding of these important, unusual chemical intermediates and will lead to an increased understanding of the homogeneous gas phase processes which are part of the reaction steps involved in CVD. The reaction pathways and intermediates will be examined for thermal and laser-induced CVD in III-V and II-VI semiconductor systems and also amorphous silicon. Techniques auxiliary to matrix isolation will be employed as well, including cryogenic thin film formation, slow warmup spectroscopy, and gas phase infrared spectroscopy.