Matrix Isolation Study of Reactive Intermediates Relevant to Thermal and Laser-Assisted Chemical Vapor Deposition

奥尔特教授获得了实验物理化学项目的资助，通过将化学气相沉积过程中产生的重要化学中间体捕获在超冷固体氩气基质中，并使用光谱学识别它们的分子结构，对其进行分离和表征。这些研究对于理解化学气相沉积的机制非常重要，用于生长薄膜和涂层的主要技术之一，用于半导体工业中微电子器件的制造和太阳能转换应用。基质分离技术的独特功能将被用于分离和表征化学气相沉积（CVD）过程中存在的重要化学中间体。这些结果将增强我们对这些重要的、不寻常的化学中间体的化学结构和键合的认识，并将增加对CVD反应步骤中均相气相过程的理解。我们将研究III-V和II-VI半导体体系以及非晶硅中热和激光诱导CVD的反应途径和中间体。辅助基质分离的技术也将被采用，包括低温薄膜形成，慢热光谱，和气相红外光谱。

Prof. Ault is supported by a grant from the Experimental Physical Chemistry Program to isolate and characterize the important chemical intermediates which are produced during chemical vapor deposition processes by trapping them in an ultracold solid argon matrix and identifying their molecular structure using spectroscopy. These studies are important to the understanding of the mechanisms involved in chemical vapor deposition, one of the primary techniques used for growing thin films and coatings used in the semiconductor industry for the fabrication of microelectronic devices and in solar energy conversion applications. The unique capabilities of the matrix isolation technique will be exploited to isolate and characterize important chemical intermediates present during chemical vapor deposition (CVD) processes. These results will enhance our knowledge of the chemical structure and bonding of these important, unusual chemical intermediates and will lead to an increased understanding of the homogeneous gas phase processes which are part of the reaction steps involved in CVD. The reaction pathways and intermediates will be examined for thermal and laser-induced CVD in III-V and II-VI semiconductor systems and also amorphous silicon. Techniques auxiliary to matrix isolation will be employed as well, including cryogenic thin film formation, slow warmup spectroscopy, and gas phase infrared spectroscopy.