Matrix Isolation Study of Reactive Intermediates Relevant to Thermal and Laser-Assisted Chemical Vapor Deposition

奥尔特教授得到了实验物理化学计划的资助，该计划通过将化学气相沉积过程中产生的重要化学中间体捕获到超冷固体Ar基质中并使用光谱分析来确定其分子结构，从而分离和表征这些重要的化学中间体。这些研究对于理解化学气相沉积所涉及的机理很重要，化学气相沉积是用于生长半导体工业中用于制造微电子器件和太阳能转换应用的薄膜和涂层的主要技术之一。基质分离技术的独特能力将被用来分离和表征化学气相沉积(CVD)过程中存在的重要化学中间体。这些结果将增强我们对这些重要的、不寻常的化学中间体的化学结构和成键的了解，并将使我们更好地理解均相气相过程，这是CVD涉及的反应步骤的一部分。将检查III-V和II-VI半导体系统以及非晶硅中的热和激光诱导的CVD的反应路径和中间产物。还将采用辅助基质隔离的技术，包括低温薄膜形成、慢速升温光谱和气相红外光谱。

Prof. Ault is supported by a grant from the Experimental Physical Chemistry Program to isolate and characterize the important chemical intermediates which are produced during chemical vapor deposition processes by trapping them in an ultracold solid argon matrix and identifying their molecular structure using spectroscopy. These studies are important to the understanding of the mechanisms involved in chemical vapor deposition, one of the primary techniques used for growing thin films and coatings used in the semiconductor industry for the fabrication of microelectronic devices and in solar energy conversion applications. The unique capabilities of the matrix isolation technique will be exploited to isolate and characterize important chemical intermediates present during chemical vapor deposition (CVD) processes. These results will enhance our knowledge of the chemical structure and bonding of these important, unusual chemical intermediates and will lead to an increased understanding of the homogeneous gas phase processes which are part of the reaction steps involved in CVD. The reaction pathways and intermediates will be examined for thermal and laser-induced CVD in III-V and II-VI semiconductor systems and also amorphous silicon. Techniques auxiliary to matrix isolation will be employed as well, including cryogenic thin film formation, slow warmup spectroscopy, and gas phase infrared spectroscopy.