In Situ Infrared Analysis of the Kinetics and Surface Chemistry of Reaction Processes on Silicon Subtrate Surfaces

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This project seeks to achieve a fundamental understanding of surface reactions and related processes during selective silicon epitaxy by chemical vapor deposition. Experiments will make use of a low pressure, high temperature emission chemical vapor deposition infrared cell, a variable angle attenuatated total reflectance cell, and Fourier Transform infrared spectroscopy. In situ emission experiments are designed to provide new information on the role of surface species such as hydrides, chlorides and oxides on silicon substrates under epitaxial growth conditions. New qualitative and quantitative understanding of fundamental processes important to surface science, and having technological relevance to the microelectronics industry is expected.