In Situ Infrared Analysis of the Kinetics and Surface Chemistry of Reaction Processes on Silicon Subtrate Surfaces

硅基底表面反应过程动力学和表面化学的原位红外分析

• 批准号: 9106123
• 负责人: Christos Takoudis
• 金额: $ 12.24万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9106123&HistoricalAwards=false
• 关键词: Situ; Infrared; Analysis; Kinetics; Surface

This project seeks to achieve a fundamental understanding of surface reactions and related processes during selective silicon epitaxy by chemical vapor deposition. Experiments will make use of a low pressure, high temperature emission chemical vapor deposition infrared cell, a variable angle attenuatated total reflectance cell, and Fourier Transform infrared spectroscopy. In situ emission experiments are designed to provide new information on the role of surface species such as hydrides, chlorides and oxides on silicon substrates under epitaxial growth conditions. New qualitative and quantitative understanding of fundamental processes important to surface science, and having technological relevance to the microelectronics industry is expected.

该项目旨在从根本上了解 选择性硅化过程中的表面反应和相关过程 通过化学气相沉积进行外延。 实验将利用 低压高温发射化学气相沉积 变角度衰减全反射红外池 细胞和傅里叶变换红外光谱。 原位 排放实验旨在提供新的信息， 表面物种，如氯化物和氧化物的作用， 在外延生长条件下的硅衬底。 新 对基本过程的定性和定量理解 重要的表面科学，并具有技术相关性， 微电子产业是值得期待的。