Growth Dynamics of Thin Metal Films on Compound Semiconductor Surfaces

对金属覆盖层形成的基本理解 化合物半导体表面将提供有价值的见解， 各种复杂的金属界面现象， 电子设备的智能设计。 这项工作将侧重于 发展一个动力学过程的定量模型， 随着有序结构的形成和发展， 化合物半导体表面上的金属膜。 初步努力 将集中在第V族和金属在表面上的吸附 III-V族化合物半导体。 %%% 在研究的第一阶段，一个新开发的时间- 依赖蒙特卡罗模型将结合紧束缚和 第一性原理赝势能总能量模型研究 在砷化镓衬底上生长锑和铋， 单层到单层的方案。 基本的描述 例如化学吸附、迁移、结合 和解吸，将有助于全面了解 基本的表面反应。 第二阶段 研究了锑和铋在两个- 将检查20个单层，其中控制因素 假晶生长和向三维岛的过渡 增长发生。 未来的工作将解决电影的问题 缺陷的形成，如二维岛的性质 沉积过程中的生长，以及条件的确定 对缺陷形成很重要。 该补助金支持博士后助理，并在 与巴特尔太平洋西北大学的研究人员合作 Laboratories.

A fundamental understanding of the formation of metal overlayers on compound semiconductor surfaces will provide valuable insight into a variety of complex metal-interfacial phenomena crucial to the intelligent design of electronic devices. This work will focus on developing a quantitative model of the kinetic processes associated with the formation and development of ordered structures for metallic films on compound semiconductor surfaces. Initial efforts will focus on the adsorption of group V and metals on the surface of III-V compound semiconductors. %%% In the first phase of the research, a newly developed time- dependent Monte Carlo model will be combined with tight-binding and first-principles pseudopotential total energy models to investigate the growth of antimony and bismuth on gallium arsenide in the sub- monolayer to one monolayer regime. The desciption of fundamental chemical processes such as chemisorption, migration, incorporation, and desorption, will contribute to a comprehensive understanding of the elementary surface reactions. In the second phase of the research the growth of antimony and bismuth in the range of two - twenty monolayers will be examined where factors controlling pseudomorphic growth and the transition to three-dimensional island growth take place. Future work will address the issue of film defect formation, such as the nature of two-dimensional island growth during deposition, and identification of the conditions important for defect formation. The grant supports a postdoctoral associate and is done in collaboration with researchers at Battelle Pacific Northwest Laboratories.