Presidential Young Investigator Award: The Surface Chemistry of Gas-Solid Materials Processing
Presidential Young Investigator Award: The Surface Chemistry of Gas-Solid Materials Processing
批准号:
9157892
负责人:
James Engstrom
金额:
$31.25万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-07-01 至 1997-06-30
中文摘要
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英文摘要
The objective of this work is a fundamental understanding of materials processing operations that involve gas-surface interactions, including chemical vapor depsostion, molecualr beam epitaxy, and plasma etching. The emphasis is on details of the reactions of gas-phase radicals or atoms with solid surfaces, and on the interactions between coincident "radiation" (ions, photons, electrons) on the one hand and the substrate and adsorbed species on the other. Radical-surface chemistry is very important to plasma processing, and also has a role in purely thermal processes such as CVD. Radiation- induced chemistry is also involved in plasma processing, and has important applications in "selected area" processing.
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NIRT: Nanoscale Engineering of Inorganic-Organic Interfaces: Applications to Molecular Scale Electronics
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批准号:0210693
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2002
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负责人:James Engstrom
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依托单位:
Engineering Research Equipment: Analytical Probes for In Situ Characterization of an Ultrahigh Vacuum Thin Film Desposition Reactor
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批准号:9610123
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项目类别:Standard Grant
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资助金额:$2.8万
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财政年份:1997
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负责人:James Engstrom
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依托单位:
GOALI: Industry/University Cooperative Research Project: Development of a Novel Thin Film Deposition Process: A Combined Experimental and Computer Simulation Study
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批准号:9500817
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项目类别:Continuing Grant
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资助金额:$29.84万
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财政年份:1995
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负责人:James Engstrom
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依托单位:
Surface Chemical Dynamics and Kinetics at the Gas-Solid Epitazial Growth Interface
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批准号:9010561
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1990
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负责人:James Engstrom
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依托单位:
海外基金