GOALI: Industry/University Cooperative Research Project: Development of a Novel Thin Film Deposition Process: A Combined Experimental and Computer Simulation Study

目标：工业/大学合作研究项目：新型薄膜沉积工艺的开发：实验和计算机模拟相结合的研究

• 批准号: 9500817
• 负责人: James Engstrom
• 金额: $ 29.84万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-04-15 至 2001-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9500817&HistoricalAwards=false
• 关键词: GOALI; Industry; University; Cooperative; Research

9500817-Engstrom - GOALI ABSTRACT Deposition and growth of thin films represents an enabling technology that impacts a number of existing and emerging industries, including microelectronic and optoelectronic device fabrication. This work will investigate the use of collimated supersonic jets of molecular thin film precursors under conditions of medium to ultrahigh vacuum to grow thin films. Previous work by the principal investigator has demonstrated explicitly that kinetic limitations to epitaxial growth can be overcome by the use of molecules possessing hyperthermal kinetic energies. This work is being extended to a fundamental examination of the connections between the chemical dynamics of the adsorption reaction and the resulting thin film morphology, as well as an explicit, quantitative evaluation of the hypersonic flow field. The studies will be conducted in a supersonic molecular beam growth chamber that has been optimized for thin film growth and evaluation of the hypersonic flow field, the latter including the pertubing effects of the substrate itself. Computational studies of the flow fields will be made employing the direct simulation Monte Carlo (DSMC) approach. These large-scale simulations will be performed on a massively parellel computing platform. Specific materials systems to be investigated include: selective epitaxial growth of silicon; deposition of silicon carbide on silicon; and deposition and growth of carbon-nitride. It is expected that these studies will provide a fundamentally-based pathway for scale-up of the process necessary for eventual commercial applications.

9500817-Engstrom -目标摘要 薄膜的沉积和生长代表了影响许多现有和新兴产业（包括微电子和光电器件制造）的使能技术。 这项工作将研究使用准直超声射流的分子薄膜前体的条件下，中等至中等真空生长薄膜。 首席研究员之前的工作已经明确证明，使用具有超热动能的分子可以克服外延生长的动力学限制。 这项工作正在扩展到一个基本的检查之间的连接的化学动力学的吸附反应和由此产生的薄膜形态，以及明确的，定量的高超声速流场的评估。 这些研究将在一个超音速分子束生长室进行，该室已被优化用于薄膜生长和高超音速流场的评估，后者包括衬底本身的pertubing效应。 将采用直接模拟蒙特卡罗（DSMC）方法进行流场的计算研究。 这些大规模的模拟将在一个大规模并行计算平台上进行。 要研究的具体材料系统包括：硅的选择性外延生长;碳化硅在硅上的沉积;以及碳氮化物的沉积和生长。 预计这些研究将为最终商业应用所需的工艺放大提供基本途径。