Surface Chemical Dynamics and Kinetics at the Gas-Solid Epitazial Growth Interface

基本的表面化学相互作用涉及在 从有机金属外延生长砷化镓 用分子束散射研究了前体 技术和表面敏感探针，如电子探针， 衍射和光电子能谱。 超声束 技术是探测吸附的有力手段， 外延的先决条件。 被吸附物的行为 表面上的中间体，包括反应，扩散， 和分解，通过调制束技术进行评估 以及通过调节表面温度。 几 研究了晶体学取向。 有人试图 合成吸附的分解产物， 和含碳物种，以评估其对 生长动力学和膜的组成。 这项工作提供了所需的基本信息， 开发更精确和统一的生产流程， 用于微电子应用的砷化镓晶体。 产生的数据也将用于模拟 现有的工艺采用外延生长。

The fundamental surface chemical interactions involved in the epitaxial growth of gallium arsenide from organometallic precursors are investigated using molecular-beam scattering techniques and surface-sensitive probes such as electron diffraction and photoelectron spectroscopy. Supersonic beam techniques are a powerful means to probe adsorption, the prerequisite to epitaxy. Behavior of the adsorbed intermediates on the surface, including reaction, diffusion, and decomposition, are assessed by modulated beam techniques and by modulation of surface temperature. Several crystallographic orientations are studied. Attempts are made to synthesize adsorbed decomposition products such as hydrogen and carbonaceous species in order to assess their influence on the growth kinetics and the composition of the film. This work provides the fundamental information needed to develop processes for more precise and uniform production of gallium arsenide crystals for microelectronic applications. The data produced will also find use in the simulation of existing processes employing epitaxial growth.