Surface Chemical Dynamics and Kinetics at the Gas-Solid Epitazial Growth Interface

用分子束散射技术和电子衍射、光电子能谱等表面敏感探针研究了金属有机前驱体外延生长砷化镓过程中的基本表面化学相互作用。超声束技术是探测吸附的有力手段，而吸附是外延的前提。表面吸附中间体的行为，包括反应、扩散和分解，通过调制束流技术和表面温度的调节来评估。研究了几种结晶学取向。试图合成吸附的分解产物，如氢和碳质物种，以评估它们对薄膜生长动力学和成分的影响。这项工作提供了开发工艺以更精确和均匀地生产用于微电子应用的砷化镓晶体所需的基本信息。所产生的数据也将用于模拟使用外延生长的现有工艺。

The fundamental surface chemical interactions involved in the epitaxial growth of gallium arsenide from organometallic precursors are investigated using molecular-beam scattering techniques and surface-sensitive probes such as electron diffraction and photoelectron spectroscopy. Supersonic beam techniques are a powerful means to probe adsorption, the prerequisite to epitaxy. Behavior of the adsorbed intermediates on the surface, including reaction, diffusion, and decomposition, are assessed by modulated beam techniques and by modulation of surface temperature. Several crystallographic orientations are studied. Attempts are made to synthesize adsorbed decomposition products such as hydrogen and carbonaceous species in order to assess their influence on the growth kinetics and the composition of the film. This work provides the fundamental information needed to develop processes for more precise and uniform production of gallium arsenide crystals for microelectronic applications. The data produced will also find use in the simulation of existing processes employing epitaxial growth.