Heterojunction Materials Characterization

异质结材料表征

• 批准号: 9160685
• 负责人: Jack Salerno
• 金额: $ 4.99万
• 依托单位: Kopin Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-01 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9160685&HistoricalAwards=false
• 关键词: Heterojunction; Materials; Characterization

This project implements a time-resolved photoluminescence technique and the related analysis method to study the carrier recombination decay process in heterojunction materials in a non- destructive and contactless fashion. The corresponding "surface velocity" parameter describing the surface and/or interface quality as well as the interface electric field will be determined quantitatively. A quantitative description of the interface quality to determine the interface electric field and to establish the relationship between these material properties and device performance is central to the characterization requirements of compound semiconductor heterojunction materials.

本项目采用时间分辨光致发光技术和相关分析方法，以无损、非接触的方式研究异质结材料中的载流子复合衰变过程。描述表面和/或界面质量以及界面电场的相应的“表面速度”参数将被定量确定。定量描述界面质量以确定界面电场，并建立这些材料性质与器件性能之间的关系，是化合物半导体异质结材料表征要求的核心。