Lateral Epitaxial Overgrowth of Galium Arsenide on Dielectrics for High Performance Electronic Devices

这项研究解决了对由砷化镓形成的改进电子设备的需求。具体的创新包括通过横向过度生长工艺在绝缘体上形成同质外延的砷化镓，并用这种层制造器件。在有源层下面使用绝缘体将产生更好的性能，以及增强抗辐射能力。性能的改进源于相邻单片器件的去耦合以及与衬底晶片的一定程度的去耦合。这项研究将确定必要的横向生长的可行性，以评估在横向过度生长的薄膜上应用有机金属化学气相沉积制造器件的可行性。

This research addresses the need for improved electronic devices formed from galium arsenide. The specific innovation comprises the formation of homoepitaxial galium arsenide on insulators by the lateral overgrowth process,and the fabrication of devices from such layers. The use of an insulator beneath an active layer will yield improved performance, as well as enhance resistance to radiation. The performance improvements derive from the decoupling of adjacent monolithic devices as well as a degree of decoupling from the substrate wafer. This research will determine the feasibility of the necessary lateral growth to evaluate the feasibility of applying organometalic chemical vapor deposition to device fabrication on the laterally overgrown films.