Lateral Epitaxial Overgrowth of Galium Arsenide on Dielectrics for High Performance Electronic Devices

这项研究解决了对由砷化镓形成的改进电子器件的需求。具体的创新包括通过横向过度生长过程在绝缘体上形成同外延砷化镓，以及从这些层制造器件。在有源层下面使用绝缘体将提高性能，并增强抗辐射能力。性能的改善源于相邻单片器件的解耦以及与衬底晶圆的一定程度的解耦。本研究将确定必要的横向生长的可行性，以评估将有机金属化学气相沉积应用于横向生长薄膜上的器件制造的可行性。

This research addresses the need for improved electronic devices formed from galium arsenide. The specific innovation comprises the formation of homoepitaxial galium arsenide on insulators by the lateral overgrowth process,and the fabrication of devices from such layers. The use of an insulator beneath an active layer will yield improved performance, as well as enhance resistance to radiation. The performance improvements derive from the decoupling of adjacent monolithic devices as well as a degree of decoupling from the substrate wafer. This research will determine the feasibility of the necessary lateral growth to evaluate the feasibility of applying organometalic chemical vapor deposition to device fabrication on the laterally overgrown films.