Lateral Epitaxial Overgrowth of Galium Arsenide on Dielectrics for High Performance Electronic Devices

用于高性能电子器件的电介质上砷化镓的横向外延过度生长

• 批准号: 8960608
• 负责人: Jack Salerno
• 金额: $ 4.98万
• 依托单位: Kopin Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-01-01 至 1990-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8960608&HistoricalAwards=false
• 关键词: Lateral; Epitaxial; Overgrowth; Galium; Arsenide

This research addresses the need for improved electronic devices formed from galium arsenide. The specific innovation comprises the formation of homoepitaxial galium arsenide on insulators by the lateral overgrowth process,and the fabrication of devices from such layers. The use of an insulator beneath an active layer will yield improved performance, as well as enhance resistance to radiation. The performance improvements derive from the decoupling of adjacent monolithic devices as well as a degree of decoupling from the substrate wafer. This research will determine the feasibility of the necessary lateral growth to evaluate the feasibility of applying organometalic chemical vapor deposition to device fabrication on the laterally overgrown films.

这项研究解决了改进电子设备的需要 由砷化镓形成。 具体创新包括 在绝缘体上形成同质外延砷化镓， 横向过生长工艺和器件的制造 从这些层。 在有源绝缘体下使用绝缘体 层将产生改进的性能， 抗辐射。 性能改进源于 从相邻单片器件的去耦以及 与衬底晶片的去耦程度。 本研究 将决定必要的横向增长的可行性， 评估有机化学气相应用的可行性 在横向过度生长的 薄膜.