III-V Heterostructures on Silicon Substrates Prepared by OMCVD for Electronic and Photonic Applications

点击翻译按钮获取中文摘要

This Phase II proposal addresses research on III-V semiconductor materials grown heteroepitaxially on silicon (Si). The feasibility of the proposed approach was demonstrated in Phase I (Award No. ISI-8861448, during which Kopin evaluated lasers formed in GaAs grown heteroepitaxially on Si by organometallic chemical vapor deposition. Although the approach was found feasible, the Phase I work also demonstrated the need for further reduction in the defect density of the heteroepitaxial GaAs films; thus, the objective of the proposed Phase II research is the attainment of an improved understanding of growth mechanisms that can be applied to reduce the deleterious effects of dislocations arising from the lattice mismatch. To more fully address the fundamental aspects of this research problem, we propose a collaborative program involving the University of Florida. By with a high h level of characterization effort, we will develop an improved understanding of the materials and growth processes, leading ultimately to defect densities on the order of 104 cm -2.