III-V Heterostructures on Silicon Substrates Prepared by OMCVD for Electronic and Photonic Applications

用于电子和光子应用的 OMCVD 硅衬底上的 III-V 异质结构

• 批准号: 9110426
• 负责人: Jack Salerno
• 金额: $ 24.97万
• 依托单位: Kopin Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-01 至 1995-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9110426&HistoricalAwards=false
• 关键词: III; Heterostructures; Silicon; Substrates; Prepared

This Phase II proposal addresses research on III-V semiconductor materials grown heteroepitaxially on silicon (Si). The feasibility of the proposed approach was demonstrated in Phase I (Award No. ISI-8861448, during which Kopin evaluated lasers formed in GaAs grown heteroepitaxially on Si by organometallic chemical vapor deposition. Although the approach was found feasible, the Phase I work also demonstrated the need for further reduction in the defect density of the heteroepitaxial GaAs films; thus, the objective of the proposed Phase II research is the attainment of an improved understanding of growth mechanisms that can be applied to reduce the deleterious effects of dislocations arising from the lattice mismatch. To more fully address the fundamental aspects of this research problem, we propose a collaborative program involving the University of Florida. By with a high h level of characterization effort, we will develop an improved understanding of the materials and growth processes, leading ultimately to defect densities on the order of 104 cm -2.

第二阶段的建议涉及III-V的研究 异质外延生长的半导体材料 硅（Si）。 的可行性建议 在第一阶段（第一阶段）， ISI-8861448，在此期间，Kopin评估了激光器 在Si上异质外延生长的GaAs中形成， 有机金属化学气相沉积 虽然这一方法被认为是可行的， 第一阶段的工作还表明， 进一步降低了缺陷密度， 异质外延GaAs薄膜;因此， 拟议的第二阶段研究是实现 更好地理解增长机制 可以用来减少 由晶格失配引起的位错 为了更充分地处理 这个研究问题，我们提出了一个合作的 佛罗里达大学的一个项目。 通过 通过高水平的表征工作，我们将 提高对材料的理解 和生长过程，最终导致缺陷 密度约为104 cm-2。