Mechanics of Diffusive Failure of Fine Metal in Integrated Circuits

研究将发展超大规模集成电路中金属互连失效的力学建模。提出了一种统一的方法，扩散空洞的生长所造成的热应力和电迁移及其组合，纳入晶界扩散驱动的应力和电流，应力和电流密度分布的控制方程。主要目标是模拟空隙生长，从而预测互连的寿命。

Research will develop mechanics modeling of failure in metal interconnects in very large-scale integrated circuits. A unified approach to diffusive void growth caused by thermal stress and electromigration and their combination is proposed, incorporating grain boundary diffusion driven concurrently by stress and electric current, and governing equations for stress and current density distributions. The primary goal would be to model void growth and thereby predict the lifetime of interconnects.