Novel Low Temperature Approaches to Epitaxial Silicon Overgrowth on Silicides

硅化物上外延硅过度生长的新型低温方法

• 批准号: 9202176
• 负责人: Steven Yalisove
• 金额: $ 20万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9202176&HistoricalAwards=false
• 关键词: Novel; Low; Temperature; Approaches; Epitaxial

The ability to grow metastable epitaxial heterostructures has driven efforts to fabricate many novel electronic devices. Recent breakthroughs in the heteroepitaxial growth of silicides such as CoSi2 on the Si(100) surface have revitalized the search for a metal base transistor; however, many problems remain. One of the most critical problems at this time is the inability to grow high quality epitaxial Si back on top of these films. This proposal addresses this goal by taking a scientifically aggressive approach in an attempt to use "kinetic engineering" to overcome the growth problems associated with heteroepitaxy on silicide surfaces. "Kinetic engineering" is intended here to describe attempts to alter the kinetics of a nucleating film by modification of the surface geometric and/or electronic structure. This will be accomplished by using adsorbates, such as As, as surfactants and controllably altering the surface topography of the substrate. %%% This research will result in a better fundamental understanding of the influence adsorbates have on the kinetics and energetics of evolving films in determining the resulting growth mode. This understanding will provide a foundation for low temperature processing of thin film structures with a desired morphology. This research will provide tools needed for the pursuit of advanced devices such as the metal base transistor and the three dimensional integration of silicon devices.

生长亚稳态外延异质结构的能力具有 推动了制造许多新型电子器件的努力。 最近 硅化物异质外延生长的突破， Si（100）表面上的CoSi 2使寻找 金属基极晶体管;然而，仍然存在许多问题。 之一 目前最关键的问题是， 高质量的外延硅回到这些薄膜之上。 这项建议 通过采取科学的积极方法来实现这一目标 试图用“动力学工程”来克服 与硅化物表面上的异质外延相关的问题。 “动力学工程”在此旨在描述试图 通过改变成核膜的动力学， 表面几何和/或电子结构。这将是 通过使用吸附物如As作为表面活性剂来实现， 可控地改变衬底的表面形貌。 %%% 这项研究将导致更好的基本理解， 吸附物对吸附的动力学和能量学的影响 在确定最终的生长模式中演化膜。 这 理解将为低温提供基础 加工具有所需形态的薄膜结构。 这 研究将为追求先进的技术提供所需的工具。 器件，如金属基极晶体管和三个 硅器件的尺寸集成。