Novel Low Temperature Approaches to Epitaxial Silicon Overgrowth on Silicides

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The ability to grow metastable epitaxial heterostructures has driven efforts to fabricate many novel electronic devices. Recent breakthroughs in the heteroepitaxial growth of silicides such as CoSi2 on the Si(100) surface have revitalized the search for a metal base transistor; however, many problems remain. One of the most critical problems at this time is the inability to grow high quality epitaxial Si back on top of these films. This proposal addresses this goal by taking a scientifically aggressive approach in an attempt to use "kinetic engineering" to overcome the growth problems associated with heteroepitaxy on silicide surfaces. "Kinetic engineering" is intended here to describe attempts to alter the kinetics of a nucleating film by modification of the surface geometric and/or electronic structure. This will be accomplished by using adsorbates, such as As, as surfactants and controllably altering the surface topography of the substrate. %%% This research will result in a better fundamental understanding of the influence adsorbates have on the kinetics and energetics of evolving films in determining the resulting growth mode. This understanding will provide a foundation for low temperature processing of thin film structures with a desired morphology. This research will provide tools needed for the pursuit of advanced devices such as the metal base transistor and the three dimensional integration of silicon devices.