Chemical Sensors for CVD Processing

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The photoluminesence of II-VI or III-V semiconductor is used to identify reversible adsorption of molecules on semiconductor surfaces. These interactions are interpreted in terms of the steric and electronic landscape of the semiconductor surface. The studies are extended to the fabrication and development of robust, real-time, in-situ monitors of the gas-phase composition in chemical vapor deposition (CVD) process streams. These sensors are based on photoluminescence, photoconductivity, or ungated field-effect transitor (FET) design, take advantage of the changes in the work function of the semiconductor on reversible adsorption. Using multisensor arrays, a complement of CVD precursors is monitored simultaneously. Optimization and testing of sensors is done in collaboration with Sandia National Laboratory. Improves quality control in the production by CVD of complex electronic materials is the key to an improved competitive position in these key materials. Achievement of this is hampered by a lack of monitoring devices that give a picture of what is happening in the CVD process. This project attacks this issue directly, aiming at real-time sensors that are suitable for use in automated or manual control systems. This award is part of the Materials Synthesis and Processing Initiative.