Chemical Sensors for CVD Processing

II-VI或III-V半导体的光致发光用于识别分子在半导体表面的可逆吸附。这些相互作用被解释为半导体表面的空间和电子景观。该研究扩展到化学气相沉积（CVD）工艺流中气相成分的鲁棒，实时，原位监测仪的制造和开发。这些传感器基于光致发光、光电导或非门控场效应晶体管（FET）设计，利用半导体功函数的变化进行可逆吸附。利用多传感器阵列，同时监测CVD前体的补充。传感器的优化和测试与桑迪亚国家实验室合作完成。在复杂电子材料的CVD生产中，提高质量控制是提高这些关键材料竞争地位的关键。这一目标的实现受到缺乏监测设备的阻碍，这些设备无法提供CVD过程中发生的情况的图像。该项目直接解决了这个问题，针对的是适合用于自动或手动控制系统的实时传感器。该奖项是材料合成和加工计划的一部分。

The photoluminesence of II-VI or III-V semiconductor is used to identify reversible adsorption of molecules on semiconductor surfaces. These interactions are interpreted in terms of the steric and electronic landscape of the semiconductor surface. The studies are extended to the fabrication and development of robust, real-time, in-situ monitors of the gas-phase composition in chemical vapor deposition (CVD) process streams. These sensors are based on photoluminescence, photoconductivity, or ungated field-effect transitor (FET) design, take advantage of the changes in the work function of the semiconductor on reversible adsorption. Using multisensor arrays, a complement of CVD precursors is monitored simultaneously. Optimization and testing of sensors is done in collaboration with Sandia National Laboratory. Improves quality control in the production by CVD of complex electronic materials is the key to an improved competitive position in these key materials. Achievement of this is hampered by a lack of monitoring devices that give a picture of what is happening in the CVD process. This project attacks this issue directly, aiming at real-time sensors that are suitable for use in automated or manual control systems. This award is part of the Materials Synthesis and Processing Initiative.