COMPAS: co integration of microelectronics and photonics for air and water sensors
COMPAS: co integration of microelectronics and photonics for air and water sensors
批准号:
10108154
负责人:
金额:
$58.45万
依托单位:
依托单位国家:
英国
项目类别:
EU-Funded
财政年份:
2024
资助国家:
英国
项目状态:
未结题
起止时间:
2024 至 --
中文摘要
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英文摘要
The main objective of COMPAS is to develop a compact, inexpensive and ultrasensitive PIC sensing platform (PSP) for air and water monitoring, relying on the co-integration of light source, detectors and electronic IC for on-chip signal processing. The PIC sensor principle will be based on interference between two guided light modes, one of which interacts with analytes and the other being a reference. The resulting intensity changes offers excellent sensitivity to changes in concentration of analytes in air or solution. Multiple light paths can be placed on the same device offering multi-analyte sensing in an ultracompact device. COMPAS builds a first-of-a kind fully integrated system around this principle (including light source, detectors and signal processing). The COMPAS PSP begins at TRL2 and will end with TRL5 validation in relevant environment by end-users towards air and water monitoring. The project will - Define sensing parameters for validating developed PIC Sensor Platform (PSP) towards three use-cases in relevant environments, being in line with the European Green Deal’s zero pollution ambition - Develop core photonic technology for implementing photonic based sensing. These include a novel photonic IC material system (Aliminium Nitride), BiModal waveguide interferometers that show superior temperature stability and sensitivity, novel material coating systems for enhanced sensing selectivity and innovative nano structured metasurfaces for novel mode engineering for increased sensitivity and optimized light coupling to facilitate the use of low power laser diodes. - Develop a Chiplet approach to co-integration of photonic sensor with microelectronic IC and photodetectors, and a coherent light-source. This will combine heterogeneous integration of a laser light source and monolithically integrated photodetector in the silicon base material.
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