Chemical Sensors for CVD Processing

摘要CTS-9510099 这种努力是针对理解和设计的新型光致发光化学传感器的基础上吸附到化合物半导体表面。 以前的工作已经确定了这种方法的可行性。 由于可逆的化学吸附，半导体近表面区域的变化形成传感器的基础;半导体表面区域的耗尽宽度的调制导致从这些结构观察到的光致发光强度的变化。 本课题的研究重点是高灵敏度和高探测率的传感材料和材料结构。 现代外延技术如金属有机气相外延（MOVPE）的使用允许生产定制的工程材料结构，以增强半导体对特定吸附物质的响应。 探索了新的化学方法来感测各种各样的技术上重要的基板，包括硅烷和III族和V族CVD前体。 新的传感设备，其中电子传输以及光致发光被用作传感器信号的开发和建模。 长期退化的传感器结构和手段，以抑制这种变化的原因也进行了探讨。 传感器设计和实现的新方法是迫切需要的;在某些情况下，如半导体加工，传感器可能是提高质量和推进设计实现的限制因素。 这项工作将半导体器件技术应用于生产小型，廉价，坚固的传感器，而无需机械部件。 正在研究的特定系统适用于化合物半导体和固态器件的生产。 基本方法具有更广泛的适用性。 ***

ABSTRACT CTS-9510099 This effort is directed to the understanding and design of novel photoluminescent chemical sensors based upon adsorption onto a compound semiconductor surface. Previous work has established the feasibility of this approach. Changes in the near-surface region of the semiconductor due to reversible chemisorption form the basis of the sensor; modulation of the depletion width of the surface region of the semiconductor leads to changes in the photoluminescence intensity observed from these structures. The thrust of this project is concerned with sensing materials and materials structures with high sensitivity and high detectivity. The use of modern epitaxial techniques such as metalorganic vapor-phase epitaxy (MOVPE) allows production of engineered materials structures tailored to enhance the response of the semiconductor to the specific adsorbed species. New chemical approaches to sensing a wide variety of technologically important substrates, including silanes and group III and group V CVD precursors, are explored. New sensing devices in which electron transport as well as photoluminescence is used as the sensor signal are developed and modeled. Causes of long-term degradation of the sensor structures and means to inhibit such changes are also explored. New approaches to sensor design and implementation are badly needed; in some cases, such as semiconductor processing, sensors may be the limiting factor in improving quality and advancing design implementation. This effort applies semiconductor device technology to the production of small, inexpensive, robust sensors without mechanical components. The specific systems under study are applicable to the production of compound semiconductors and solid-state devices. The basic approach has a much broader applicability. ***