Plasma Immersion Ion Implantation for Subsurface Material Synthesis

该研究涉及等离子体浸没离子注入(1)埋藏介质（氧化物）形成（SIMOX），(2)离子束混合，同时沉积和注入形成GeSi和GeSiC体系，以及(3)等离子体横向不均匀和离子束混合的二维等离子体建模。这项研究强调了亚表面材料的合成，其中注入不受热平衡的限制，并且可以进行大于固体溶解度的注入浓度。除了埋藏电介质外，还有多种技术可以实现埋藏氮氧化物（SMON）和埋藏半导体异质结（Si/SiC/Si）。等离子体建模领域的目的是将等离子体参数与电子设备特性联系起来。＊＊＊

9509800 Cheung The research addresses Plasma Immersion Ion Implantation for (1) buried dielectric (oxide) formation (SIMOX), (2) ion-beam mixing with simultaneous deposition and implantation to form GeSi and GeSiC systems and (3) plasma modeling with 2D effects of plasma lateral nonuniformity and ion-beaming mixing. This research emphasizes subsurface material synthesis where the implantation is not constrained by thermal equilibrium and implanted concentrations greater than solid-solubility can be performed. In addition to buried dielectrics there are variations on the technique to realize buried oxynitride (SMON) and buried semiconductor heterojunctions (Si/SiC/Si). The intent in the plasma modeling area is to relate plasma parameters to electronic device characteristics. ***