Mixed Metal Precursors for Organo-Transition Metal CVD of Stable Metal/Compound Semiconductor Systems

该奖项由特别项目办公室颁发， 材料合成与加工化学部 倡议有机过渡金属配合物 金属和主族金属将被合成， 化学气相沉积（CVD）的前体 晶格匹配半导体 III-V族化合物半导体的界面。这样的接口 在形成有源肖特基势垒或欧姆 固态电路中的触点。该研究将包括 有机金属合成，然后进行CVD筛选， 膜的组成和结构的表征 和界面区域。 电气性能也将 测定金属间薄膜的沉积也将是 试图从单独的单一金属的结合气流 前体薄膜的组成将通过以下方式控制： 中间分子加成的选择性沉积 具有第III族受体分子的化合物。 %%% 这项研究将提供有关 混合金属有机金属的形成和分解 综合体，同时也提供了新的途径， 在化合物半导体上形成稳定的混合金属膜。

This award is made by the Office of Special Projects in the Chemistry Division under the Materials Synthesis and Processing Initiative. Organometallic complexes combining transition metals and main group metals will be synthesized to serve as precursors for Chemical Vapor Deposition (CVD) of thermodynamically stable and lattice-matched semiconductor interfaces for III-V compound semiconductors. Such interfaces are essential in forming active Schottky barriers or Ohmic contacts in solid-state circuits. The research will consist of organometallic synthesis, followed by CVD screening and characterization of the composition and structure of the film and the interface region. Electrical properties will also be determined. Deposition of intermetallic films will also be attempted from the joined gas streams of separate single metal precursors. The composition of the films will be controlled by selective deposition of intermediate molecular addition compounds with Group III acceptor molecules. %%% This research will provide fundamental new information on the formation and decomposition of mixed-metal organometallic complexes while also providing new routes to thermodynamically stable mixed-metal films on compound semiconductors.