Mixed Metal Precursors for Organo-Transition Metal CVD of Stable Metal/Compound Semiconductor Systems

用于稳定金属/化合物半导体系统的有机过渡金属 CVD 的混合金属前体

• 批准号: 9208398
• 负责人: Herbert Kaesz
• 金额: $ 30万
• 依托单位: University of California-Los Angeles
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-08-01 至 1997-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9208398&HistoricalAwards=false
• 关键词: Mixed; Metal; Precursors; Organo; Transition

This award is made by the Office of Special Projects in the Chemistry Division under the Materials Synthesis and Processing Initiative. Organometallic complexes combining transition metals and main group metals will be synthesized to serve as precursors for Chemical Vapor Deposition (CVD) of thermodynamically stable and lattice-matched semiconductor interfaces for III-V compound semiconductors. Such interfaces are essential in forming active Schottky barriers or Ohmic contacts in solid-state circuits. The research will consist of organometallic synthesis, followed by CVD screening and characterization of the composition and structure of the film and the interface region. Electrical properties will also be determined. Deposition of intermetallic films will also be attempted from the joined gas streams of separate single metal precursors. The composition of the films will be controlled by selective deposition of intermediate molecular addition compounds with Group III acceptor molecules. %%% This research will provide fundamental new information on the formation and decomposition of mixed-metal organometallic complexes while also providing new routes to thermodynamically stable mixed-metal films on compound semiconductors.

该奖项由材料合成和加工倡议下的化学部门特别项目办公室颁发。结合过渡金属和主族金属的有机金属配合物将作为化学气相沉积（CVD）热力学稳定和晶格匹配半导体界面的III-V化合物半导体的前驱体。在固态电路中，这种界面对于形成有源肖特基垒或欧姆触点是必不可少的。该研究将包括有机金属合成，然后是CVD筛选和表征膜和界面区域的组成和结构。电性能也将被确定。还将尝试从分离的单一金属前驱体的连接气流中沉积金属间膜。薄膜的组成将由具有III族受体分子的中间分子加成化合物的选择性沉积来控制。这项研究将为混合金属有机金属配合物的形成和分解提供新的基础信息，同时也为在化合物半导体上制备热稳定的混合金属薄膜提供新的途径。