课题基金 / 基金详情

Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors

Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
挥发性过渡金属配合物的探索性合成和反应性以及作为分子前体的用途
批准号:
1665191
负责人:
Gregory Girolami
金额:
$48.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-07-01 至 2020-06-30

项目摘要

项目成果

Gregory Girolami的其他基金

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中文摘要
翻译
美国国家科学基金会化学部化学合成项目支持伊利诺伊大学厄巴纳-香槟分校Gregory S. Girolami教授的项目,该项目旨在开发用于薄膜化学气相沉积(CVD)的新型和更好的分子前体。目前的工作将开发新的过渡金属化合物类别,特别是因为它们涉及到使用这些分子作为金属和金属氧化物沉积在具有深垂直特征的表面上的前体。这项研究将使人们更好地理解挥发性过渡金属化合物的化学性质,以及如何使用它们均匀地填充如此深的特征,重点是寻找更好的方法来沉积现代计算机芯片的关键部件电线和绝缘体。这项工作将加强Girolami?美国集团和微电子领域的领先公司。该项目将直接促进学士和博士学生的教育和培训,研究结果将在国际会议上发表,并在知名科学期刊上发表。该奖项将有助于教育不同群体的本科生和研究生,并使吉罗拉米教授能够撰写简短的广播节目,突出公众感兴趣的最新科学进展。一个重要的国家科学需求是开发新的和更好的分子前驱体用于化学气相沉积(CVD)薄膜。目前的项目通过研究新的挥发性化合物(特别是过渡金属)的合成,研究它们的化学反应,研究它们的挥发性和作为薄膜前体的效用,直接促进了这一需求。目前项目的一些具体目标是合成含有硬-软螯合配体的新型配合物,以及合成高分子量但仍具有高挥发性的化合物,这些化合物有望用于超共形薄膜的CVD。同时,这些新化合物用于薄膜CVD的研究将与这些技术的专家合作进行。这些新分子的发展将导致性能更好的材料和新的制造方法,这将使集成电路的持续小型化。通过这种方式,Girolami集团将有助于实现国际半导体技术路线图中最重要的“困难挑战”之一:快速引入用于薄膜化学气相沉积(CVD)的新材料/工艺。本项目处于无机化学与材料化学的交叉领域,非常适合各级科学家的教育。Girolami教授?S集团也处于有利地位,为在科学领域代表性不足的学生提供最高水平的教育和培训。涉及制作和播放TinyTech广播节目的外展活动也将成为资助项目的一部分。
英文摘要
The Chemical Synthesis Program of the Chemistry Division of NSF supports the project by Professor Gregory S. Girolami of the University of Illinois at Urbana-Champaign to develop new and better molecular precursors for the chemical vapor deposition (CVD) of thin films. The current work will develop new classes of transition metal compounds, especially as they relate to the use of such molecules as precursors for the deposition of metals and metal oxides on surfaces with deep vertical features. The research will lead to a better understanding of the chemistry of volatile transition metal compounds and how they can be used to uniformly fill such deep features with a focus on better ways to deposit the wires and insulators that are key components of modern-day computer chips. The work will enhance already existing interactions between Professor Girolami?s group and leading companies in microelectronics development. This project will contribute directly to the education and training of B.S. and Ph.D. students, and the results will be disseminated by presentations at international conferences, and by publication in reputable scientific journals. This award will contribute to the education of a diverse group of undergraduate and graduate students, and enable Professor Girolami to write short radio spots highlighting recent scientific advances of interest to the public. A vital national scientific need is the development of new and better molecular precursors for the chemical vapor deposition (CVD) of thin films. The current project is contributing directly to this need by investigating the synthesis of new volatile compounds (especially of the transition metals), investigations of their chemical reactivities, and studies of their volatilities and utilities as thin film precursors. Some of the specific objectives of the current project are the synthesis of new complexes containing hard-soft chelating ligands, and the synthesis of high molecular weight but still highly volatile compounds, which are expected to be useful for the CVD of superconformal thin films. In parallel, investigations of the use of these new compounds for the CVD of thin films will be carried out collaboratively with experts in these techniques. The development of these new molecules will lead to better performing materials and new fabrication methods that will enable the continued miniaturization of integrated circuits. In this way, the Girolami group will contribute to achieving one of the most important "Difficult Challenges" of the International Technology Roadmap for Semiconductors: the rapid introduction of new materials/processes for the chemical vapor deposition (CVD) of thin films. The project lies at the interface of inorganic and materials chemistry, and is well suited for the education of scientists at all levels. Professor Girolami?s group is also well positioned to provide the highest level of education and training for students underrepresented in science. Outreach activities involving the production and broadcast of TinyTech radio spots will also be part of the funded project.
期刊论文(17)
专著(0)
科研奖励(0)
会议论文
Chemical vapor deposition of magnetic iron-cobalt alloy thin films: Use of ammonia to stabilize growth from carbonyl precursors
磁性铁钴合金薄膜的化学气相沉积:使用氨来稳定羰基前体的生长
DOI: 10.1116/1.5045671
发表时间: 2018
期刊: Journal of Vacuum Science & Technology A
影响因子: 2.9
作者: [Zhang, Pengyi, Zhang, Zhejun, Abelson, John R., Girolami, Gregory S.]
通讯作者: Girolami, Gregory S.
Superconformal coating and filling of deep trenches by chemical vapor deposition with forward-directed fluxes
使用正向通量的化学气相沉积进行超保形涂层和深沟槽填充
DOI: 10.1116/1.5038100
发表时间: 2018
期刊: Journal of Vacuum Science & Technology A
影响因子: 2.9
作者: [Talukdar, Tushar K., Wang, Wenjiao B., Girolami, Gregory S., Abelson, John R.]
通讯作者: Abelson, John R.
DOI: 10.1116/1.5088050
发表时间: 2019
期刊: Journal of Vacuum Science & Technology A
影响因子: 2.9
作者: [Mohimi, Elham, Zhang, Zhejun V., Mallek, Justin L., Liu, Sumeng, Trinh, Brian B., Shetty, Pralav P., Girolami, Gregory S., Abelson, John R.]
通讯作者: Abelson, John R.
Area-selective chemical vapor deposition of cobalt from dicobalt octacarbonyl: Enhancement of dielectric-dielectric selectivity by adding a coflow of NH 3
从八羰基二钴中对钴进行区域选择性化学气相沉积:通过添加 NH 3 共流增强介电-介电选择性
DOI: 10.1116/1.5144501
发表时间: 2020
期刊: Journal of Vacuum Science & Technology A
影响因子: 2.9
作者: [Zhang, Zhejun V., Liu, Sumeng, Girolami, Gregory S., Abelson, John R.]
通讯作者: Abelson, John R.
15
    Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
    Exploratory Synthesis and Reactivity of Volatile Transition Metal Complexes and Use as Molecular Precursors
    Volatile Transition Metal Compounds with New Ligand Archetypes: Exploratory Synthesis, Small Molecule Reactivity, and Use as Molecular Precursors
    Synthesis of New Molecular Precursors and Development of Surface Catalysts and Inhibitors for the Chemical Vapor Deposition of Thin Films
    国内基金
    海外基金
    新型滤波器综合技术-直接综合技术(Direct synthesis Technique)的研究及应用
    • 批准号:
      61671111
    • 项目类别:
      面上项目
    • 资助金额:
      58.0万元
    • 批准年份:
      2016
    • 负责人:
      肖飞
    • 依托单位: