Global Modeling and Diagnostics of Plasma Processing Reactors

摘要：为了提高对等离子体刻蚀和等离子体沉积等等离子体过程的理解，并为新型等离子体反应器的开发提供帮助，提出了一种结合模型和实验的方案。这里提出的工作是对以前工作的延伸和延续。研究了氩/氯等离子体系统。本文将考虑两种辉光放电模型，即整体辉光放电模型和较简单的两区域辉光放电模型。将寻求随时间变化的玻尔兹曼方程的解，以获得有关电子传递和反应系数的信息；这些结果将与中性输运和中性反应的结果相结合。模型预测将与实验进行比较。空间分辨光学发射光谱、激光干涉测量、朗缪尔探针测量以及质谱测量、离子通量和能量分析将进行。该模型将应用于三种反应器结构，即平行板反应器、无电极等离子体反应器和ECR反应器源区。硅和砷化镓将用作蚀刻研究的衬底。

Abstract for Demetre Economou / University of Houston / CTS-9216023 A combined modeling and experimental program is proposed to improve the understanding of plasma processes such as plasma etching and plasma deposition of thin films, and to aid in the development of new plasma reactors. The work proposed here represents an extension and continuation of previous work. The argon/chlorine plasma system will be investigated. Two kinds of glow discharge models will be considered viz. an overall glow discharge model and a simpler two-region model. Solutions of the time-dependent Boltzmann equation will be sought to obtain information on electron transport and reaction coefficients; these results will be integrated with results for neutral transport and neutral reaction. Model predictions will be compared to experiment. Spatially resolved optical emission spectroscopy, laser interferometry, and Langmuir probe measurements together with mass spectrometric measurements and ion flux and energy analysis will be carried out. The model will be applied to three kinds of reactor configurations viz. parallel plate reactors, electrodeless plasmas and the source region of ECR reactors. Silicon and GaAs will be used as substrates for etching studies.