Ion-Ion Plasmas: Fundamentals and Applications in Semiconductor Manufactoring
Ion-Ion Plasmas: Fundamentals and Applications in Semiconductor Manufactoring
批准号:
9713262
负责人:
Demetre Economou
金额:
$55.72万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1997
资助国家:
美国
项目状态:
已结题
起止时间:
1997-09-01 至 2001-08-31
中文摘要
摘要- Economou ECS - 9713262 这是一个综合的理论/实验研究的离子-离子(几乎无选举)等离子体在电感耦合等离子体(ICP)源。 讨论的主题包括在非常低的压力下脉冲放电中离子-离子等离子体的形成和时空动力学,负离子提取和加速的机制下施加的偏压的影响,和离子-离子等离子体的蚀刻,特别是负离子的贡献。 流体和动力学模型都是以层次化的方式从分析到全尺寸二维数值模型开发的。 在实验上,负离子,正离子,和脉冲氯ICP放电中的电子的时间演变测量的压力在1至20毫托范围内。 还测量了负离子和正离子的通量和能量分布,以及由每个离子引起的蚀刻。 离子-离子等离子体是在电负性气体中脉冲放电的后期余辉中形成的。 已知这种系统在用于微电子器件制造时产生上级质量的蚀刻。 这项研究提供了这个潜在的有价值的,但知之甚少的系统的基本见解。
英文摘要
Abstract - Economou ECS - 9713262 This is a combined theoretical/experimental investigation of ion-ion (virtually election-free) plasmas in inductively coupled plasma (ICP) sources. Topics addressed include the formation and spatiotemporal dynamics of ion-ion plasmas in pulsed discharges at very low pressures, the mechanism of negative ion extraction and acceleration under the influence of an externally applied bias, and etching by ion-ion plasmas, especially the contribution of negative ions. Both fluid and kinetic models are developed in a hierarchial manner from analytic to full-scale two-dimensional numerical models. Experimentally, the temporal evolution of negative ions, positive ions, and electrons in pulsed chlorine ICP discharges is measured for pressures in the 1 to 20 millitorr range. The flux and energy distribution of negative and positive ions, and the etching induced by each, are also measured. Ion-ion plasmas are formed in the late afterglow of pulsed discharges in electronegative gases. Such systems are known to produce superior quality etching when used in microelectronic device manufacture. This study provides fundamental insight into this potentially valuable but poorly understood system.
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会议论文
Plasma-Surface Interactions During In-Situ Photo-Assisted Etching
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批准号:1500518
-
项目类别:Continuing Grant
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资助金额:$43.5万
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财政年份:2015
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负责人:Demetre Economou
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依托单位:
Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching
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批准号:0903426
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2009
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负责人:Demetre Economou
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依托单位:
Non-Local Electron Transport in Inductively Coupled Plasmas
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批准号:0072854
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项目类别:Continuing Grant
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资助金额:$33.81万
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财政年份:2000
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负责人:Demetre Economou
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依托单位:
Support for Gaseous Electronics Conference GEC-2000
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批准号:0090154
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项目类别:Standard Grant
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资助金额:$0.5万
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财政年份:2000
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负责人:Demetre Economou
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依托单位:
Global Modeling and Diagnostics of Plasma Processing Reactors
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批准号:9216023
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项目类别:Continuing Grant
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资助金额:$27.96万
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财政年份:1993
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负责人:Demetre Economou
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依托单位:
Towards a Global Plasma Etching Reactor Model
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批准号:8708908
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项目类别:Continuing Grant
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资助金额:$6.98万
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财政年份:1987
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负责人:Demetre Economou
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依托单位:
海外基金