Towards a Global Plasma Etching Reactor Model

一项联合的理论和实验研究将探索等离子体反应堆的刻蚀潜力。这项研究将集中在活性化学介质背景下的离子传输。先进的诊断技术(朗缪尔探头、发射光谱学)将绘制浓度分布图，并允许准确了解非对称情况。氯化气体和硅表面被选为一个例子。这样的方法应该有助于理解蚀刻过程的细微之处。最终，当所需的精度接近分子水平时，它将有助于决定最佳的蚀刻工艺。

A joint theoretical and experimental study will explore the etching potential of a plasma reactor. The study will focus on ion transport in the context of an active chemical medium. Advanced diagnostics (Langmuir probes, emission spectroscopy) will map concentration profiles and allow for an accurate knowledge of non-symmetrical situations. Chlorinated gases and silicon surfaces have been chosen as an example. Such an approach should help understand the fine points of the etching process. Ultimately it will help decide on the optimum etching process when the required accuracy approaches the molecular level.