Resonant Tunneling and Hot Electron Spectroscopy in Buried Rare-Earth Arsenide/Semiconductor Heterostructures

艾伦外延半金属/半导体异质结构具有通过提供掩埋互连或接地平面或使得能够控制共振隧穿结构和热电子晶体管中的量子输运来向半导体电子器件添加新尺寸的潜力。 利用稀土单砷化物/GaAs系统的独特性质，我们建议调查量子输运通过超薄埋半金属层的化合物半导体中的“晶体管样”的测试结构。 私家侦探提出i）确定半金属量子威尔斯中量子限制的作用，ii）测量半金属量子威尔斯中的电子透射、反射和损耗，以及iii）评估该材料系统用于共振隧穿和热电子晶体管的潜力。 ***

9301222 Allen Epitaxial semi-metal/semiconductor heterostructures have the potential to add new dimensions to semiconductor electronics by providing buried interconnects or ground planes or enabling control of quantum transport in resonant tunneling structures and hot electron transistors. Using the unique properties of the Rare-earth monarsenide/GaAs system we propose investigating quantum transport through ultra-thin buried semi-metal layers in compound semiconductors in "transistor like" test structures. The P.I. propose to i) determine the role of quantum confinement in semi-metal quantum wells, ii) measure electron transmission, reflection and loss in semi-metal quantum wells and iii) assess the potential of this material system for resonant tunneling and hot electron transistors. ***