Kinetics and Reactor Design of Copper CVD Processes

铜金属化是一种潜在的制造超大型集成（ULSI）器件的新材料技术。铜的优点是电阻率低，耐电和应力迁移能力强。与其他沉积方法相比，化学气相沉积（CVD）具有几个优点，包括能够在高纵横比特征（例如，沟槽和多层次金属化）上获得良好的薄膜一致性。本项目旨在研究建立铜薄膜低温CVD作为ULSI器件金属化新技术所需的反应物、机理和反应器设计标准。主要目标是建立各种Cu CVD过程的定量、机理速率表达式和反应器输运模型。这些模型将应用于分析使用垂直流单晶片反应器测量的特定CuI和CuII化合物的实验生长速率。将特别关注高转化率下的产物抑制效应，最终动力学结果将与高表面积铜粉上配体吸附/解吸动力学的独立研究相辅相成。V 1 SITEVST 91S #y 2 ÕHEMADV 91S jW s ÕSSAY BK！AGV b ÕEFFERS1BK！V 0；杰斐逊，杰克诉；Õurfrm7 Õeurne bk ！n OEURALNEBK !摘要/ Abstract摘要：铜金属化是一种极具潜力的制造超材料的新技术。（* x）~ x ！​!D X X (Times New Roman Symbol & Arial O O " h E / Maria K. Burka Maria K. Burka

Abstract - Griffin & Maverick - 9311527 Copper metallization is a potential new material technology for manufacturing ultra large scale integration (ULSI) devices. Advantages of copper include low resistivity and high resistance to electro- and stress-migration. Chemical vapor deposition (CVD) offers several advantages relative to other deposition methods including the ability to achieve good film conformality over high-aspect ratio features (for example, trenches and multi-level metallizations). This project is aimed at studying the reactants, mechanisms, and reactor design criteria needed to establish low-temperature CVD of copper thin films as a new metallization technology of ULSI devices. The primary goal is to develop quantitative, mechanistic rate expressions and reactor transport models of various Cu CVD processes. These models will be applied to analyze experimental growth rates for specific CuI and CuII compounds measured using a vertical flow, single wafer reactor. Special attention will be given to product inhibition effects at high conversion, to which end kinetic results will be complemented with independent studies of ligand adsorption/desorption kinetics on high surface area copper powders. V l SITEVST 91S #y 2 ÕHEMADV 91S jW s ÕSSAY BK! AGV b ÕEFFERS1BK! V O ; JEFFERS1JAC V S ; ÕURFRM7 ÕEURNE BK! n ÕEURALNEBK! F , = COV 91 yC Abstract - Griffin & Maverick - 9311527 Copper metallization is a potential new material technology for man ufacturing ultra l ! ( * X ~ X ! ! D X X ( Times New Roman Symbol & Arial O O " h E e / Maria K. Burka Maria K. Burka