SGER - Novel Reaction Chemistry for CVD of Tantalum Thin Films

SGER - 钽薄膜 CVD 的新型反应化学

• 批准号: 0222028
• 负责人: Gregory Griffin
• 金额: $ 3.99万
• 依托单位: Louisiana State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-05-01 至 2003-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0222028&HistoricalAwards=false
• 关键词: SGER; Novel; Reaction; Chemistry; CVD

The objective of this project is to develop a new process for Ta chemical vapor deposition (CVD). The deposition of TaN and Ta-Si-N films have potential applications in microelectronics, but useful methods for forming them have not been reported. The reactants will be TaF5 and SiH4. Calculations suggest that these materials are the simplest commercially available compounds that have favorable thermodynamics for producing Ta metal while avoiding silicide formation. Films will be deposited over a range of operating conditions and characterization measurements will determine whether Ta metal is being deposited cleanly and uniformly. Training of graduate students will be the primary educational impact. The results of this project may have a significant impact on the microelectronics industry. Tantalum and mixed Ta/TaNx thin films are the leading candidates for diffusion barrier layers, which are essential for advanced interconnect technology based on copper metallization. The proposed work should also enhance the fundamental understanding of early transition metal chemistry. The mechanistic implications of the observed kinetics may be useful for subsequently developing an alternating layer deposition technology for the reactants used in this study.

本计画的目的是发展一种新的钽化学气相沉积制程。 TaN和Ta-Si-N薄膜的沉积在微电子领域具有潜在的应用价值，但其制备方法还未见报道。 反应物为TaF 5和SiH 4。 计算表明，这些材料是最简单的市售化合物，具有良好的热力学生产钽金属，同时避免硅化物的形成。 薄膜将在一系列操作条件下沉积，表征测量将确定Ta金属是否被干净均匀地沉积。 研究生的培养将是主要的教育影响。 该项目的成果可能对微电子行业产生重大影响。 钽和混合Ta/TaNx薄膜是扩散阻挡层的主要候选材料，这对于基于铜金属化的先进互连技术至关重要。 拟议的工作还应加强对早期过渡金属化学的基本理解。 观察到的动力学的机械影响可能有助于随后开发本研究中使用的反应物的交替层沉积技术。