SGER - Novel Reaction Chemistry for CVD of Tantalum Thin Films

本项目的目的是开发一种新的化学气相沉积（CVD）工艺。TaN和Ta-Si-N薄膜的沉积在微电子学中有潜在的应用，但形成它们的有用方法尚未报道。反应物是TaF5和SiH4。计算表明，这些材料是最简单的商业上可用的化合物，具有有利的热力学产生金属钽，同时避免硅化物的形成。薄膜将在一系列操作条件下沉积，表征测量将确定Ta金属是否被沉积干净和均匀。研究生的培养将是主要的教育影响。该项目的研究结果可能对微电子工业产生重大影响。钽和混合Ta/TaNx薄膜是扩散阻挡层的主要候选材料，这对于基于铜金属化的先进互连技术至关重要。所提出的工作也应加强对早期过渡金属化学的基本理解。观察到的动力学的机制含义可能对随后开发本研究中使用的反应物的交替层沉积技术有用。

The objective of this project is to develop a new process for Ta chemical vapor deposition (CVD). The deposition of TaN and Ta-Si-N films have potential applications in microelectronics, but useful methods for forming them have not been reported. The reactants will be TaF5 and SiH4. Calculations suggest that these materials are the simplest commercially available compounds that have favorable thermodynamics for producing Ta metal while avoiding silicide formation. Films will be deposited over a range of operating conditions and characterization measurements will determine whether Ta metal is being deposited cleanly and uniformly. Training of graduate students will be the primary educational impact. The results of this project may have a significant impact on the microelectronics industry. Tantalum and mixed Ta/TaNx thin films are the leading candidates for diffusion barrier layers, which are essential for advanced interconnect technology based on copper metallization. The proposed work should also enhance the fundamental understanding of early transition metal chemistry. The mechanistic implications of the observed kinetics may be useful for subsequently developing an alternating layer deposition technology for the reactants used in this study.