Rate Enhancement and Microstructure Control of Copper CVD Processes

铜 CVD 工艺的速率提高和微观结构控制

• 批准号: 9612157
• 负责人: Gregory Griffin
• 金额: $ 30.2万
• 依托单位: Louisiana State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-01-01 至 2000-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9612157&HistoricalAwards=false
• 关键词: Rate; Enhancement; Microstructure; Control; Copper

Abstract - Griffin - 9612157 Chemical vapor deposition (CVD) of copper thin films is being studied as a potential technology for interconnect metallization in future generations of deep sub-micron integrated circuits. As interconnect linewidths decrease and clock frequencies increase, the on-chip resistance-capacitance time delays become the major limitation in achieving high circuit speed. Smaller linewidths also lead to higher current densities, which raises concern about reliability issues such as electromigrations and stress-induced void formation. Copper offers several intrinsic property advantages over aluminum, the current material of choice for metallization. These include lower resistivity, improved electromigration resistance, and increased resistance to stress-induced voidage. This project is an inter-disciplinary, multi-investigator program of combined experimental and theoretical research aimed at further developing the process technology needed for the chemical vapor deposition of copper thin films for ULSI device metallization. This research is aimed at developing a fundamental, quantitative understanding of the reaction mechanism for deposition processes based on Cu(II) reduction chemistry. By studying this group of reactions, the PI s will be exploring an alternative to the Cu(I) disproportionation process. The higher reactivity of the Cu(I) reactants used for the latter process may eventually lead to problems with film nucleation and grain size control, as the microelectronics industry moves progressively toward higher aspect ratios for via fills. The bis(beta-diketonate) reduction chemistry can also provide a more versatile pathway for CVD of other metals (i.e., volatile beta-diketonate compounds exist for most transition metals, while the disproportionation pathway is essentially unique to copper).

格里芬-9612157化学气相沉积铜薄膜被认为是未来几代深亚微米集成电路互连金属化的一种潜在技术。随着互连线宽度的减小和时钟频率的增加，片上阻容延迟成为实现高电路速度的主要限制。较小的线宽也会导致较高的电流密度，这引发了人们对可靠性问题的担忧，例如电迁移和应力诱导的空穴形成。与铝相比，铜有几个固有的性能优势，铝是目前金属化的首选材料。这些包括更低的电阻率，改善的电迁移阻力，以及增加对应力诱导的空化的抵抗。该项目是一个跨学科、多研究人员的实验和理论研究相结合的项目，旨在进一步开发用于ULSI器件金属化的化学气相沉积铜薄膜所需的工艺技术。这项研究的目的是在铜(II)还原化学的基础上，对沉积过程的反应机理有一个基本的、定量的理解。通过对这组反应的研究，派S将探索一种替代铜(I)歧化过程的方法。随着微电子工业逐步向通孔填充的高纵横比方向发展，用于后一种工艺的铜(I)反应物的较高反应性最终可能导致薄膜成核和晶粒度控制问题。双(β-二酮)还原化学也可以为其他金属的化学气相沉积提供一种更广泛的途径(即，大多数过渡金属都存在挥发性的β-二酮化合物，而歧化途径基本上是铜所独有的)。