Research on Optimization of a Whiskerless Mixer/Varactor Schottky Barrier Diode Structure for Application at Millimeter and Submillimeter - Ft. Monmouth

用于毫米级和亚毫米级应用的无须混频器/变容二极管肖特基势垒二极管结构的优化研究 - 英尺。

• 批准号: 8913169
• 负责人: Robert Mattauch
• 金额: $ 3.01万
• 依托单位: University of Virginia Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-15 至 1990-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8913169&HistoricalAwards=false
• 关键词: Research; Optimization; Whiskerless; Mixer; Varactor

Optimized whiskerless Schottky barrier diodes offer great potential as high frequency mixer or varactor elements. This research is necessary to realize the goal of producing millimeter and submillimeter wavelength receivers which are both rugged and relatively easy to fabricate and use. Although superconductive devices are making inroads as planar, low-noise mixer elements, Schottky diodes will continue to be the mixer element of choice for higher frequencies and for room temperature applications. Other important applications include harmonic generators for LO power, varactor tuning elements, and noise sources.

经过优化的无须肖特基势垒二极管 可能用作高频混频器或变容二极管元件。 本研究对于实现 产生毫米和亚毫米波长 接收器既坚固又相对容易 制作和使用。 虽然电子设备 作为平面、低噪声混合器元件， 肖特基二极管将继续成为 更高频率和室温的选择 应用. 其他重要应用包括 用于LO电源的谐波发生器，变容二极管调谐 和噪声源。