Gallium Arsenide Heterostructures by Optical Detection of Pulsed Nuclear Magnetic Resonance

9311913 Hahn半导体中核磁共振（ODNMR）的灵敏光学探测技术将被用于研究砷化镓异质结构和量子阱的性质。ODNMR测量将由电场、奈特位移、掺杂成分和杂质组成。为了提高传统连续波ODNMR技术的灵敏度和通用性，将开发一种新的脉冲双共振ODNMR技术并应用于砷化镓异质结构。重点研究光诱导GaAs表面自旋极化与外部自旋系统之间的自旋耦合。本研究项目将发展新技术，包括光谱学技术和射频核磁共振波谱学技术。原子核与射频信号之间的相对微弱的相互作用被放大并通过光学或激光光谱方法检测到。这些技术将应用于半导体表面原子。目的是检测磁性从半导体中的电子到驻留在半导体表面的非半导体原子的转移。这些结果将具有重要的意义，并将为半导体技术的潜在应用提供独特的信息。＊＊＊

9311913 Hahn The technique of sensitive optical detection of nuclear magnetic resonance (ODNMR) in semiconductors will be applied to study the properties of gallium arsenide heterostructure and quantum wells. ODNMR measurements will be made of electric fields, Knight shifts, doped constituents, and impurities. A new pulsed and double resonance ODNMR technique will be developed and applied to GaAs heterostructures in order to improve the detection sensitivity and versatility beyond conventional cw ODNMR techniques. The research will focus on the study of spin-spin coupling between photo-induced GaAs surface spin polarization and external spin systems. %%% This research project will develop new techniques involving optical spectroscopy techniques and radio-frequency nuclear magnetic resonance spectroscopy techniques. The relatively weak interaction between a nucleus and a radio-frequency signal is amplified and detected by optical or laser spectroscopy methods. These techniques will be applied to surface atoms on semiconductors. The objective to detect a transfer of magnetism from electrons in the semiconductors to non-semiconductor atoms residing on the semiconductor surface. The results will be of fundamental interest and will provide unique information of potential application in semiconductor technology. ***