GASP: Gallium Arsenide (III-V) photonic integrated circuits built like Silicon Photonics

GASP:砷化镓 (III-V) 光子集成电路,类似于硅光子学

基本信息

  • 批准号:
    EP/V052179/1
  • 负责人:
  • 金额:
    $ 31.01万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2021
  • 资助国家:
    英国
  • 起止时间:
    2021 至 无数据
  • 项目状态:
    已结题

项目摘要

There are very few exponential trends in technology that stay exponential for long. Moore's law is probably the best example, where an exponential (the doubling of the number of transistors in modern microprocessors every 18-24 months) has persisted for almost four decades, with great benefit to modern society. On the other hand, in recent years, there has been another slightly more worrying exponential. This is the total amount of data that we as a society have been consuming. It has been growing exponentially for the past decade and shows no signs of slowing down. It is probably best illustrated by modern data centers that have grown in size scale and number all around the globe to the point where by 2030, they are expected to consume ~ 20% of the world's total electricity supply and even today, they emit more CO2 than the global airline industry. If you look at a data center more carefully, most of the energy is dissipated not in computing, but in sending bits around at very high data rates over variable distances, and this is predominantly done in the optical domain.If we can build a more efficient photonic integrated circuit for handling this optical communication, we can address this energy problem in principle. The work done as part of this project is aimed towards developing the underlying platform and a scalable manufacturing process for building these efficient photonic devices. Our approach is to apply the best manufacturing processes (derived from silicon photonics and silicon MEMS foundries) to the best available optical materials (compound semiconductors). We believe this is a natural route towards building the most energy efficient integrated photonic devices. In addition to data center transceivers, the platform developed here will also be applicable to other areas ranging from photonic devices for satellite communication to cryogenic photonics platforms for quantum information.
在技术领域,很少有指数趋势能够长期保持指数级的。摩尔定律可能是最好的例子,它以指数形式(现代微处理器中的晶体管数量每18-24个月翻一番)持续了近40年,给现代社会带来了巨大的好处。另一方面,近年来,出现了另一个稍微更令人担忧的指数。这是我们作为一个社会一直在消费的数据量。在过去的十年里,它一直在呈指数级增长,而且没有任何放缓的迹象。现代数据中心可能是最好的例证,这些数据中心在全球范围内的规模和数量都在增长,到2030年,它们预计将消耗全球总电力供应的20%,即使在今天,它们排放的二氧化碳也比全球航空业还多。如果你更仔细地观察一个数据中心,大部分能量不是在计算中消耗的,而是在可变距离上以非常高的数据速率发送比特,这主要是在光学领域完成的。如果我们能够建立一个更高效的光子集成电路来处理这种光通信,我们原则上就可以解决这个能量问题。作为该项目的一部分,所做的工作旨在开发基础平台和可扩展的制造工艺,以构建这些高效的光子器件。我们的方法是将最好的制造工艺(源自硅光子学和硅MEMS铸造厂)应用于最好的可用光学材料(化合物半导体)。我们相信,这是制造最节能的集成光子器件的自然途径。除了数据中心收发器,这里开发的平台还将适用于其他领域,从用于卫星通信的光子设备到用于量子信息的低温光子学平台。

项目成果

期刊论文数量(3)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Using electrical resistance asymmetries to infer the geometric shapes of foundry patterned nanophotonic structures.
利用电阻不对称性来推断铸造图案化纳米光子结构的几何形状。
  • DOI:
    10.1364/oe.460803
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    3.8
  • 作者:
    Mittal V
  • 通讯作者:
    Mittal V
Piezo-Optomechanical Signal Transduction Using Lamb-Wave Supermodes in a Suspended GalliumArsenide Photonic-Integrated-Circuit Platform
  • DOI:
    10.1103/physrevapplied.18.054030
  • 发表时间:
    2022-03
  • 期刊:
  • 影响因子:
    4.6
  • 作者:
    Ankur Khurana;Pisu Jiang;K. Balram
  • 通讯作者:
    Ankur Khurana;Pisu Jiang;K. Balram
Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits.
量化和减轻悬浮 GaAs 光子集成电路中的光学表面损耗。
  • DOI:
    10.1364/ol.492505
  • 发表时间:
    2023
  • 期刊:
  • 影响因子:
    3.6
  • 作者:
    Thomas R
  • 通讯作者:
    Thomas R
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Krishna Coimbatore Balram其他文献

Krishna Coimbatore Balram的其他文献

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{{ truncateString('Krishna Coimbatore Balram', 18)}}的其他基金

ECCS-EPSRC Micromechanical Elements for Photonic Reconfigurable Zero-Static-Power Modules
用于光子可重构零静态功率模块的 ECCS-EPSRC 微机械元件
  • 批准号:
    EP/X025381/1
  • 财政年份:
    2024
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grant
New directions in piezoelectric phononic integrated circuits: exploiting field confinement (SOUNDMASTER)
压电声子集成电路的新方向:利用场限制(SOUNDMASTER)
  • 批准号:
    EP/Z000688/1
  • 财政年份:
    2024
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grant
Next generation Acoustic Wave Filter Platform
下一代声波滤波器平台
  • 批准号:
    EP/W035359/1
  • 财政年份:
    2023
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grant
QC:SCALE - Quantum Circuits: Systematically Controlling And Linking Emitters for integrated solid state photonics platforms
QC:SCALE - 量子电路:系统地控制和链接集成固态光子平台的发射器
  • 批准号:
    EP/W006685/1
  • 财政年份:
    2022
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grant
Guiding, Localizing and IMaging confined GHz acoustic waves in GaN Elastic waveguides and Resonators for monolithically integrated RF front-ends
用于单片集成射频前端的 GaN 弹性波导和谐振器中的有限 GHz 声波的引导、定位和成像
  • 批准号:
    EP/V005286/1
  • 财政年份:
    2021
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grant
SCREAM: Synthesizing and Controlling Resonant Electric and Magnetic near fields using piezoelectric micro-resonators
SCREAM:使用压电微谐振器合成和控制谐振电和磁近场
  • 批准号:
    EP/V048856/1
  • 财政年份:
    2021
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grant

相似海外基金

Memory-Enhanced Entanglement Distribution with Gallium ARsenide quantum Dots
砷化镓量子点的记忆增强纠缠分布
  • 批准号:
    EP/Z000556/1
  • 财政年份:
    2024
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grant
Aluminum Gallium Arsenide Coatings to Improve LIGO Sensitivity
砷化铝镓涂层可提高 LIGO 灵敏度
  • 批准号:
    2012017
  • 财政年份:
    2020
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Continuing Grant
Optical Functions For Gallium Arsenide Bismuth Semiconductor Alloys
砷化镓铋半导体合金的光学功能
  • 批准号:
    481275-2015
  • 财政年份:
    2015
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Alexander Graham Bell Canada Graduate Scholarships - Master's
Materials engineering proof of concept to achieve the simultaneous goals of low optical loss and low Vp in DP-QPSK electro-optic modulators based on gallium arsenide by u2t Photonics UK Ltd.
u2t Photonics UK Ltd 进行的材料工程概念验证,可在基于砷化镓的 DP-QPSK 电光调制器中同时实现低光学损耗和低 Vp 的目标。
  • 批准号:
    710234
  • 财政年份:
    2012
  • 资助金额:
    $ 31.01万
  • 项目类别:
    GRD Proof of Concept
Piezospectroscopy and ab-initio calculations of carbon-oxygen complexes in gallium arsenide
砷化镓中碳氧复合物的压电光谱和从头计算
  • 批准号:
    188697224
  • 财政年份:
    2011
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Research Grants
SBIR Phase I: Large Aperture, Periodically-Structured Gallium Arsenide for Infrared and THz Wavelength Conversion
SBIR 第一阶段:用于红外和太赫兹波长转换的大孔径、周期性结构砷化镓
  • 批准号:
    1013472
  • 财政年份:
    2010
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Standard Grant
High-capacity transport, wavelenght division multiplexing photonic integrated circuits in gallium arsenide
砷化镓中的高容量传输、波分复用光子集成电路
  • 批准号:
    412164-2010
  • 财政年份:
    2010
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Engage Grants Program
High efficiency thin-film gallium arsenide solar cells
高效薄膜砷化镓太阳能电池
  • 批准号:
    DP0345466
  • 财政年份:
    2003
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Discovery Projects
CAREER: Silicon and Gallium Arsenide Nanowire Devices
职业:硅和砷化镓纳米线器件
  • 批准号:
    0093552
  • 财政年份:
    2001
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Continuing Grant
Kinetics Versus Thermodynamics: A Study of Molecular-Beam Epitaxy Growth of Gallium Arsenide
动力学与热力学:砷化镓分子束外延生长的研究
  • 批准号:
    9802586
  • 财政年份:
    1998
  • 资助金额:
    $ 31.01万
  • 项目类别:
    Continuing Grant
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