Custom-Layered Ferroelectric Films: A Novel Approach to Studying and Overcoming DC Ferroelectic Degradation

小行星9312072 这是一份提交给探索性研究小额赠款计划（SGER）的提案。 PI建议使用分子束外延（MBE）技术来生长具有缓冲层的铁电氧化物的堆叠薄膜层。 目的是制备具有可控晶界的薄膜铁电体，并研究其对直流铁电退化问题的影响。 %%% 这是一个SGER项目。 该项目计划生长具有缓冲层的铁电氧化物堆叠薄膜层。 目的是制备具有可控晶界的外延薄膜。 通过这些晶界，该项目旨在研究这些边界对直流退化问题的影响。 这一问题一直困扰着作为电子器件材料的氧化物铁电体。 如果能查明其原因，其解决方案将使氧化物铁电体成为未来重要的电子材料，适合作为非易失性存储材料。 ***

9312072 Schlom This is a proposal submitted to the Small Grants for Exploratory Research (SGER) Program. The PI proposed to use the molecular beam epitaxy (MBE) techniques to grown stacked thin film layers of feeroelectric oxides with buffers. The objective was to prepare thin film ferroelectrics with controlled grain boundaries, and to study their effects on the problem of DC ferroelectric degradation. %%% This is a SGER project. The project plans to grown stacked thin film layers of ferrorelectric oxides with buffers. The goal is to prepare expitaxial film with controlled grain boundaries. Through these grain boundaries, the project intends to study the effects of these boundaries on the problem of DC degradation. This problem plagues oxide ferroelectrics as electronic device materials. If its cause can be ascertained, its solution can make the oxide ferroelectrics important electronic materials of the future, suitable as non-volatile memory materials. ***