Custom-Layered Ferroelectric Films: A Novel Approach to Studying and Overcoming DC Ferroelectic Degradation

9312072施洛姆这是一份提交给探索性研究小额助学金(SGER)计划的提案。PI建议使用分子束外延(MBE)技术生长带缓冲层的铁电氧化物堆积薄膜。目的是制备晶界可控的铁电薄膜，并研究其对直流铁电退化问题的影响。%这是SGER项目。该项目计划用缓冲剂生长铁电氧化物的堆叠薄膜。其目标是制备晶界可控的外延薄膜。通过这些晶界，该项目打算研究这些晶界对DC退化问题的影响。这个问题困扰着作为电子器件材料的氧化物铁电材料。如果能够查明其原因，其解决方案将使氧化物铁电材料成为未来重要的电子材料，适合作为非易失性存储材料。***

9312072 Schlom This is a proposal submitted to the Small Grants for Exploratory Research (SGER) Program. The PI proposed to use the molecular beam epitaxy (MBE) techniques to grown stacked thin film layers of feeroelectric oxides with buffers. The objective was to prepare thin film ferroelectrics with controlled grain boundaries, and to study their effects on the problem of DC ferroelectric degradation. %%% This is a SGER project. The project plans to grown stacked thin film layers of ferrorelectric oxides with buffers. The goal is to prepare expitaxial film with controlled grain boundaries. Through these grain boundaries, the project intends to study the effects of these boundaries on the problem of DC degradation. This problem plagues oxide ferroelectrics as electronic device materials. If its cause can be ascertained, its solution can make the oxide ferroelectrics important electronic materials of the future, suitable as non-volatile memory materials. ***