CAREER: Melting-free Photonic Memory with Layered Chalcogenide Materials

职业：采用层状硫族化物材料的免熔化光子存储器

• 批准号: 2338546
• 负责人: TINGYI GU
• 金额: $ 55万
• 依托单位: University of Delaware
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2024
• 资助国家: 美国
• 起止时间: 2024-03-01 至 2029-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2338546&HistoricalAwards=false
• 关键词: CAREER; Melting; free; Photonic; Memory

Nonvolatile memories, which retain their device status (resistance or refractive index change) after removing the external drive (such as heat, electric field, current, or illumination), are indispensable components in many stand-alone systems. Nonvolatile electronic memories have a rich history, and they can be broadly categorized into three primary groups: phase change material (PCM), memristor, and ferroelectric memory, operating through thermal-induced atomic restructuring, current-driven ionic dynamics, and electric field-oriented polarization, respectively. Over the past half-century, electronic memory technologies have witnessed significant growth, achieving a high level of maturity in terms of scalability, endurance, and CMOS integration. Being able to perform uniform phase transitions over a subwavelength scale makes PCMs particularly suitable for photonic applications. For switching between amorphous and crystalline states, the chalcogenide PCMs are brought to a melting temperature to break the covalent bonds. The cooling rate determines the final state. The high melting temperature sets the upper limit of clock rate, integration density, and the device lifetime. The proposed works will explore alternative optical reversible tuning mechanisms, address a few myths and challenges in the new material platform, and locate proper photonic memory device schematics. The CAREER project will be carried out by graduates, with the involvement of undergraduates and high school interns. Through local society-organized summer camps, our undergraduate and high school interns will share their initiatives and motivations for choosing STEM with the younger generations, especially the females and minorities. The proposed projects bridge the fields of layered material physics, semiconductor manufacturing, and photonic technologies, and strengthen multidisciplinary education among quantum mechanics, nanofabrication, optoelectronics, and photonic system engineering.The proposed work explores melting-free mechanisms in layered chalcogenide materials for nonvolatile tuning and switching in integrated photonics, enabled by the unique atomic structures in these materials. The small energy barrier facilitates low temperature reversible phase transitions, which reduces the chance of element segregation-associated device failure. This material search started with In2Se3. Its layered structures are convertible and stable at room temperature. In addition, loss-invariant large refractive index tuning in layered chalcogenide through photochemistry will be explored in ambient conditions. Through in-situ probing of the material and device responses, a physical framework will be developed for describing the complex interplay between the thermal and mechanical processes in the phase transition process, understand the details of transient dynamics at atomic scale, and optimize device geometric design and fabrication steps towards selected photonic applications, from high contrast coherent optical modulator, phase array to integrated multi-layer metasurface system for photonic computing.This project is jointly funded by the Electrical, Communications and Cyber Systems division(ECCS), and the Established Program to Stimulate Competitive Research (EPSCoR).This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非易失性存储器在移除外部驱动器（如热量、电场、电流或照明）后仍保留其设备状态（电阻或折射率变化），是许多独立系统中不可或缺的组件。非易失性电子存储器具有丰富的历史，并且它们可以大致分为三个主要组：相变材料（PCM）、忆阻器和铁电存储器，分别通过热诱导原子重构、电流驱动离子动力学和电场取向极化来操作。在过去的半个世纪里，电子存储器技术取得了显著的发展，在可扩展性、耐久性和CMOS集成方面达到了高度成熟。能够在亚波长尺度上执行均匀的相变使得PCM特别适合于光子应用。为了在非晶态和晶态之间切换，使硫属化物PCM达到熔融温度以破坏共价键。冷却速率决定了最终状态。高熔化温度设定了时钟速率、集成密度和器件寿命的上限。拟议的工作将探索替代的光学可逆调谐机制，解决新材料平台中的一些神话和挑战，并找到适当的光子存储器件原理图。CAREER项目将由毕业生实施，本科生和高中实习生也将参与。通过当地社会组织的夏令营，我们的本科生和高中实习生将与年轻一代，特别是女性和少数民族分享他们选择STEM的倡议和动机。该项目将在层状材料物理、半导体制造和光子技术领域架起一座桥梁，加强量子力学、纳米纤维、光电子学和光子系统工程等多学科的教育。该项目将探索层状硫族化物材料中的无熔化机制，通过这些材料中独特的原子结构实现集成光子学中的非易失性调谐和开关。小的能量势垒促进低温可逆相变，这降低了与元素偏析相关的器件故障的机会。该材料检索从In2Se3开始。它的层状结构在室温下是可转换的和稳定的。此外，损耗不变的大折射率调谐层状硫族化合物通过光化学将在环境条件下进行探索。通过对材料和器件响应的原位探测，将建立一个物理框架，用于描述相变过程中热和机械过程之间的复杂相互作用，了解原子尺度下瞬态动力学的细节，并优化器件几何设计和制造步骤，以实现选定的光子应用，从高对比度相干光调制器，相控阵集成多层超颖表面系统的光子计算。该项目由电气，通信和网络系统部门（ECCS）共同资助，以及刺激竞争研究的既定计划（EPSCoR）该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。