Feedback Control In Semiconductor Manufacturing: Reactive Ion Etching
Feedback Control In Semiconductor Manufacturing: Reactive Ion Etching
批准号:
9312134
负责人:
Pramod Khargonekar
金额:
$30.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1993
资助国家:
美国
项目状态:
已结题
起止时间:
1993-09-01 至 1998-08-31
中文摘要
9312134 Khargonekar这一建议是一个重大努力的一部分,由系统/控制和固态电子专家,以推进控制和系统理论的应用,以真实的时间反馈控制的半导体制造设备。 我们选择了反应离子刻蚀(RIE)作为我们的初始研究工具。 该建议描述了真实的时间控制系统理论和技术应用于RIE所需的基础研究。 我们的总体目标是重新设计RIE机,以增强可控性和提高性能。 我们相信,这项研究计划有可能提供显着改善RIE的性能特性,可达到的特征尺寸,晶圆加工的均匀性和产量。***
英文摘要
9312134 Khargonekar This proposal is part of a major effort by systems/control and solid state electronics specialists to advance the application of control and systems theory to real time feedback control of semiconductor manufacturing equipment. We have chosen Reactive Ion Etching (RIE) as our initial research vehicle. This proposal describes fundamental research necessary for the application of real time control systems theory and technology to RIE. Our overall goal is to redesign the RIE machine for enhanced controllability and improved performance. We believe that this research program has the potential of offering dramatic improvement in the performance characteristics of RIE as measured by attainable feature size, uniformity of wafer processing, and yield. ***
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国内基金
海外基金
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批准号:--
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项目类别:--
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依托单位: