Feedback Control In Semiconductor Manufacturing: Reactive Ion Etching

半导体制造中的反馈控制：反应离子蚀刻

• 批准号: 9312134
• 负责人: Pramod Khargonekar
• 金额: $ 30万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9312134&HistoricalAwards=false
• 关键词: Feedback; Control; Semiconductor; Manufacturing; Reactive

9312134 Khargonekar This proposal is part of a major effort by systems/control and solid state electronics specialists to advance the application of control and systems theory to real time feedback control of semiconductor manufacturing equipment. We have chosen Reactive Ion Etching (RIE) as our initial research vehicle. This proposal describes fundamental research necessary for the application of real time control systems theory and technology to RIE. Our overall goal is to redesign the RIE machine for enhanced controllability and improved performance. We believe that this research program has the potential of offering dramatic improvement in the performance characteristics of RIE as measured by attainable feature size, uniformity of wafer processing, and yield. ***

该提案是系统/控制和固态电子专家推动控制和系统理论在半导体制造设备实时反馈控制中的应用的主要努力的一部分。我们选择了反应离子蚀刻（RIE）作为我们最初的研究工具。本提案描述了实时控制系统理论和技术应用于RIE所需的基础研究。我们的总体目标是重新设计RIE机器，以增强可控性和改进性能。我们相信，这项研究项目有潜力通过可实现的特征尺寸、晶圆加工均匀性和良率来显著改善RIE的性能特征。＊＊＊