The Influence of Substrates on the Kinetics of Cadmium Telluride Organmetallic Vapor-Phase Epitaxy

小行星9319186 本文从宏观和微观两个层次研究了碲化镉同质外延的有机金属气相外延（OMVPE）动力学。 宏观实验探讨了基片取向差对OMVPE沉积材料形貌的影响。 速率法的步骤生长和小丘生长的发展，以检验的假设，步骤是常用的源dimethylcadmium和diisopropyltellurium的反应的关键网站。 将开发一种方法，使用速率定律来预测高质量外延膜可以生长的条件。 研究了基片表面微结构对沉积机理中基元反应的影响。 采用扫描隧道显微镜、低能电子衍射和其他表面科学技术。 碲化镉及其相关化合物的薄膜对于制造涉及光发射器、辐射检测器和光学开关的器件是有吸引力的。 目前，它们是通过分子束外延（MBE）制备的，这是一种缓慢、繁琐和昂贵的方法。 OMVPE技术的完善应该允许这些薄膜的高产量、低成本生产，使它们为消费者应用所接受。 这一努力的最终方向就是这一目标。 ***

9319186 Sides This is an investigation of the kinetics of organometallic vapor- phase epitaxy (OMVPE) of homoepitaxial cadmium telluride at both the macroscopic and microscopic levels. Macroscopic experiments explore the effect of misorientation of substrates on the morphology of OMVPE-deposited material. Rate laws for step growth and for hillock growth are developed in order to test the hypothesis that steps are critical sites of reactions of the commonly used sources dimethlycadmium and diisopropyltellurium. A methodology will be developed to use rate laws to predict conditions under which high-quality epitaxial films can be grown. The effect of substrate surface microstructure on the elementary reactions in the deposition mechanism is also investigated. Scanning tunneling microscopy, low-energy electron diffraction, and other surface science techniques are employed. Thin films of cadmium telluride and related compounds are attractive for fabrication of devices involving light emitters, radiation detectors, and optical switching. At present, they are prepared by molecular beam epitaxy (MBE), a method that is slow, cumbersome, and expensive. Perfection of OMVPE techniques should permit higher-volume, lower-cost production of these films, making them acceptable for consumer applications. It is to this end that this effort is ultimately directed. ***