Morphological Instability During CdTe Homoepitaxy

教授保罗·赛德斯和大卫肖尔将调查的形态不稳定性发生在同质外延化学气相沉积的CdTe薄膜从有机金属前体的起源。 他们将使用Monte Carlo模拟和连续生长模型以及CdTe在（100），（110），（111）CD和（111）Te上沉积的实验。 形态将确定与nomarsky和扫描隧道显微镜在时间分辨的方式，并将观察结果与模拟进行比较。 基于散射全内反射红外光谱技术，发展了一种新的单层膜检测技术。 低于900 nm的辐射将被引导通过晶体朝向CdTe蒸汽界面，目的是检测台阶的出现。 的假设，Schwoebel障碍是负责的形态不稳定的碲化镉沉积OMVPE将进行测试。

Professors Paul Sides and David Sholl will investigate the origin of the morphological instability occurring during homoepitaxial chemical vapor deposition of CdTe thin films from organometallic precursors. They will use Monte Carlo Simulations and continuum growth models as well as experiments of CdTe deposition on (100), (110), (111)CD and (111)Te. Morphology will be determined with nomarsky and scanning tunneling microscopy in a time-resolved manner, and the observations will be compared with the simulations. A new monoloayer-sentitive technique will be developed based on scattered total internal reflection infrared spectroscopy. Radiaiton below 900 nm will be directed through the crystal towards the CdTe-vapor interface with the purpose of detecting the appearance of steps. The hypothesis that Schwoebel barriers are responsible for the morphological instability of CdTe deposited by OMVPE will be tested.