Morphological Instability During CdTe Homoepitaxy

保罗·赛斯教授和大卫·绍尔教授将研究同质外延化学气相沉积有机金属前驱体制备的CdTe薄膜时出现的形态不稳定性的根源。他们将使用蒙特卡罗模拟和连续生长模型以及在(100)、(110)、(111)Cd和(111)Te上沉积CdTe的实验。形态将由诺马斯基显微镜和扫描隧道显微镜以时间分辨的方式确定，并将观测结果与模拟结果进行比较。基于散射全内反射红外光谱，将发展一种新的单层敏感技术。900 nm以下的射线将通过晶体定向到CdTe-蒸汽界面，目的是检测台阶的出现。Schwoebel势垒是OMVPE沉积的CdTe晶体形态不稳定的原因，这一假说将得到验证。

Professors Paul Sides and David Sholl will investigate the origin of the morphological instability occurring during homoepitaxial chemical vapor deposition of CdTe thin films from organometallic precursors. They will use Monte Carlo Simulations and continuum growth models as well as experiments of CdTe deposition on (100), (110), (111)CD and (111)Te. Morphology will be determined with nomarsky and scanning tunneling microscopy in a time-resolved manner, and the observations will be compared with the simulations. A new monoloayer-sentitive technique will be developed based on scattered total internal reflection infrared spectroscopy. Radiaiton below 900 nm will be directed through the crystal towards the CdTe-vapor interface with the purpose of detecting the appearance of steps. The hypothesis that Schwoebel barriers are responsible for the morphological instability of CdTe deposited by OMVPE will be tested.