Morphological Instability During CdTe Homoepitaxy

CdTe 同质外延过程中的形态不稳定性

• 批准号: 9813938
• 负责人: Paul Sides
• 金额: $ 10万
• 依托单位: Carnegie-Mellon University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2001-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9813938&HistoricalAwards=false
• 关键词: Morphological; Instability; During; CdTe; Homoepitaxy

Professors Paul Sides and David Sholl will investigate the origin of the morphological instability occurring during homoepitaxial chemical vapor deposition of CdTe thin films from organometallic precursors. They will use Monte Carlo Simulations and continuum growth models as well as experiments of CdTe deposition on (100), (110), (111)CD and (111)Te. Morphology will be determined with nomarsky and scanning tunneling microscopy in a time-resolved manner, and the observations will be compared with the simulations. A new monoloayer-sentitive technique will be developed based on scattered total internal reflection infrared spectroscopy. Radiaiton below 900 nm will be directed through the crystal towards the CdTe-vapor interface with the purpose of detecting the appearance of steps. The hypothesis that Schwoebel barriers are responsible for the morphological instability of CdTe deposited by OMVPE will be tested.

Paul Sides教授和David Sholl教授将研究在有机金属前驱体的CdTe薄膜的同外延化学气相沉积过程中发生的形态不稳定性的起源。他们将使用蒙特卡罗模拟和连续生长模型，以及CdTe沉积在（100）、（110）、（111）CD和（111）Te上的实验。形态学将用诺马斯基显微镜和扫描隧道显微镜以时间分辨的方式确定，并将观察结果与模拟结果进行比较。在散射全内反射红外光谱的基础上，发展了一种新的单腔敏感技术。900 nm以下的辐射将通过晶体指向cdte -蒸气界面，目的是检测台阶的外观。关于Schwoebel屏障是导致OMVPE沉积的CdTe形态不稳定的假设将被验证。