New Alloys and Heterostructures for II-VI Visible Semiconductor Lasers and Devices

用于 II-VI 可见半导体激光器和器件的新型合金和异质结构

• 批准号: 9320415
• 负责人: Maria Tamargo
• 金额: $ 30.2万
• 依托单位: CUNY City College
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-15 至 1997-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9320415&HistoricalAwards=false
• 关键词: New; Alloys; Heterostructures; II; VI

9320415 Tamargo This proposal is for the growth and characterization of novel ternary and quaternary II-VI compound semiconductors and heterostructures that will provide a range of unique properties needed for the design of practical visible light emitters. At present, rudimentary blue-green lasers based on ZnCdSe/ZnSe heterostructures have been demonstrated. The ternary is the small bandgap material or well. However, non-ideal band offsets between those two materials and defects due to lattice mismatch within the II-VI structure and with the substrate limit the performance of the device. As in III-V technology, it is possible to combine binary II-VI compounds to form ternary and quaternary alloys and thus adjust the band structure ad lattice constant of the materials to those desired. Very few of these II-VI mixed alloys have been grown and investigated. It will be enhanced through several collaborations for additional materials characterization. Simple devices using those heterostructures which posses more promising properties, will also be investigated. ***

9320415 Tamargo 该提案用于新型三元和四元 II-VI 化合物半导体和异质结构的生长和表征，这些半导体和异质结构将提供实用可见光发射器设计所需的一系列独特性能。 目前，基于ZnCdSe/ZnSe异质结构的基本蓝绿激光器已经得到论证。 三元材料是小带隙材料或良好的材料。 然而，这两种材料之间的非理想能带偏移以及由于 II-VI 结构内和衬底的晶格失配而导致的缺陷限制了器件的性能。与 III-V 技术一样，可以将二元 II-VI 化合物组合形成三元和四元合金，从而将材料的能带结构和晶格常数调整到所需的值。 这些 II-VI 族混合合金很少被生长和研究。 它将通过一些额外材料表征的合作得到增强。 还将研究使用具有更有前景特性的异质结构的简单器件。 ***