Improved Materials for Wide Bandgap II-VI Visible Emitters and Devices

建议编号：ECS-9707213首席研究员：Maria Tamargo标题：宽带隙II-VI可见发射器和器件的改进材料分析：在这项研究中，将研究一类II-VI材料的优化，以设计生长在III-V衬底上的可见发射器。所研究的II-VI材料系为镁锌镉Se，III-V衬底为InP。该系统的一个显著优点是薄膜和衬底之间良好的晶格匹配，这将增加器件寿命和可靠性。新的研究将包括：(1)用于减少界面缺陷的界面端接或“封顶”方案，(2)用于高p型掺杂的Te掺杂，以及(3)用于晶格硬化的Be掺杂。这种系统的重要应用包括蓝绿色发光二极管和激光二极管。

Proposal Number: ECS-9707213 Principal Investigator: Maria Tamargo Title: Improved materials for wide bandgap II-VI visible emitters and devices Analysis: In this research, the optimization of a class of II-VI materials for the design of visible emitters grown on III-V substrates will be investigated. The II-VI materials system under investigation is MgZnCdSe and the III-V substrate is InP. A strong advantage of the proposed system is the good lattice match between the film and the substrate which should result increased device lifetime and reliability. The new research will include investigations into (1) an interface termination or "capping" scheme for reduction of defects at the interface, (2) Te incorporation for high p-type doping and (3) Be incorporation for lattice hardening. Important applications of such systems include blue-green light emitting diodes, and laser diodes.