Improved Materials for Wide Bandgap II-VI Visible Emitters and Devices

用于宽禁带 II-VI 可见光发射体和器件的改进材料

• 批准号: 9707213
• 负责人: Maria Tamargo
• 金额: $ 30万
• 依托单位: Research Foundation of the City University of New York
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-09-01 至 2001-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9707213&HistoricalAwards=false
• 关键词: Improved; Materials; Wide; Bandgap; II

Proposal Number: ECS-9707213 Principal Investigator: Maria Tamargo Title: Improved materials for wide bandgap II-VI visible emitters and devices Analysis: In this research, the optimization of a class of II-VI materials for the design of visible emitters grown on III-V substrates will be investigated. The II-VI materials system under investigation is MgZnCdSe and the III-V substrate is InP. A strong advantage of the proposed system is the good lattice match between the film and the substrate which should result increased device lifetime and reliability. The new research will include investigations into (1) an interface termination or "capping" scheme for reduction of defects at the interface, (2) Te incorporation for high p-type doping and (3) Be incorporation for lattice hardening. Important applications of such systems include blue-green light emitting diodes, and laser diodes.

提案编号：ECS-9707213 主要研究者：Maria Tamargo 标题：改进的宽带隙II-VI可见光发射器和器件材料 分析： 在这项研究中，一类II-VI族材料的优化设计的可见光发射器生长在III-V族衬底将进行调查。所研究的II-VI族材料系统是MgZnCdSe，III-V族衬底是InP。所提出的系统的一个很大的优势是薄膜和衬底之间的良好晶格匹配，这将导致增加的器件寿命和可靠性。 新的研究将包括调查（1）界面终止或“盖帽”计划，以减少界面处的缺陷，（2）Te掺入高p型掺杂和（3）Be掺入晶格硬化。 这种系统的重要应用包括蓝绿色发光二极管和激光二极管。