Ion-Mixing and Related Planar Processing Techniques for Monolithic Integration of Photonic Devices

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9321209 Yu An investigation of ion-mixing of superlattices as a processing technology for the fabrication of planar photonic integrated circuits shall be undertaken. Ion-mixing has the promise of being a versatile, high yield fabrication approach for photonic integrated circuits requiring only a singly epitaxial growth step, and providing a planar structure. We have demonstrated the feasibility of using ion-mixing to induce compositional disorder in superlattice structures made of InGaAs/InP and AlGaAs/GaAs materials at temperatures below 600{SYMBOL 176 \f "Symbol"}C with ions such as argon and oxygen and with low ion doses. The following objectives will be pursued (1) investigation of the device integration using a combination of ion-mixing and solid phase regrowth for superlattice disordering, and photo elastic effects, (2) extension of the technique to exploratory optoelectronic materials such as InGoT/GaAs and InGoT/InAsP/InP, (3) incorporation of the techniques in the fabrication of tunable lasers with distributed Bragg reflector, photo detector with tunable filter, (4) improvement of fiber-waveguide coupling using ion-mixing and related techniques, (5) incoporation of superlattice disordering in the base of heterojunction bipolar transistor to improve performance and manufacturability. ***