Ion-Mixing and Related Planar Processing Techniques for Monolithic Integration of Photonic Devices

9321209余超晶格离子混合作为一种制造平面光子集成电路的加工技术，应该进行研究。离子混合有望成为一种通用的、高产量的光子集成电路制造方法，只需要一个外延生长步骤，并提供一个平面结构。我们已经证明了在低于600℃的温度下，用氩和氧等离子和低离子剂量，用离子混合诱导InGaAs/InP和AlGaAs/GaAs材料制成的超晶格结构中成分无序的可行性。以下目标将被追求：(1)利用离子混合和固相再生相结合的超晶格无序和光弹性效应来研究器件集成；(2)将该技术扩展到探索光电子材料，如InGoT/GaAs和InGoT/InAsP/InP；(3)将该技术应用于制造具有分布式布拉格反射器的可调谐激光器，具有可调谐滤波器的光电探测器，以及具有可调谐滤波器的光电探测器。(4)利用离子混合和相关技术改善光纤波导耦合；(5)在异质结双极晶体管的基底中加入超晶格无序以提高性能和可制造性。＊＊＊

9321209 Yu An investigation of ion-mixing of superlattices as a processing technology for the fabrication of planar photonic integrated circuits shall be undertaken. Ion-mixing has the promise of being a versatile, high yield fabrication approach for photonic integrated circuits requiring only a singly epitaxial growth step, and providing a planar structure. We have demonstrated the feasibility of using ion-mixing to induce compositional disorder in superlattice structures made of InGaAs/InP and AlGaAs/GaAs materials at temperatures below 600{SYMBOL 176 \f "Symbol"}C with ions such as argon and oxygen and with low ion doses. The following objectives will be pursued (1) investigation of the device integration using a combination of ion-mixing and solid phase regrowth for superlattice disordering, and photo elastic effects, (2) extension of the technique to exploratory optoelectronic materials such as InGoT/GaAs and InGoT/InAsP/InP, (3) incorporation of the techniques in the fabrication of tunable lasers with distributed Bragg reflector, photo detector with tunable filter, (4) improvement of fiber-waveguide coupling using ion-mixing and related techniques, (5) incoporation of superlattice disordering in the base of heterojunction bipolar transistor to improve performance and manufacturability. ***