Ion Mixing As A Processing Technique For Monolithic And And Array Integration of Photonic Devices

光子器件的集成一直是 近年来，由于其 对光通信系统的影响。 然而，制造的发展 光子集成所涉及的过程还没有 很大程度上是由于功能的多样性 因此各种不同的操作模式 光子器件 由于这些要求， 许多光子器件结构 用于单片制造的兼容性。 有 一个重要的需要，发展更好的大规模 可制造的工艺， 一体化 我们建议研究离子混合 作为用于光子晶体的平面集成的工艺， 量子阱超晶格器件 结构. 作为一种处理技术，离子混合 提供了许多优点：（i）该方法可以 在足够低的温度下进行， 对于自对准工艺，（ii）金属离子掩膜， 自对准目的可以用作电极 装置，（iii）容易获得的惰性气体离子只是 与浅掺杂剂离子一样有效， 原子质量导致无序，和（iv） 明智地选择的离子可用于诱导 无序化和改善器件隔离 同步 然而，有几个问题 在离子混合变得 一种用于光子集成的有用工艺。 第一 问题是要了解混合过程中， 微观层面，以便将混合 半导体材料及其性能， 如带隙、光学指数、有或无应变 涉案 第二个与材料有关 离子辐照造成的损伤， 传输和光学性质。 将这种损害降低到一定水平的方法 可接受的光子集成将是 在这项研究中调查。 第三个问题是， 研究离子混合如何用于地层 激光波导，光子学的关键组件， 技术. 第四个问题是调查使用 离子混合在异质结改进中的应用 双极晶体管 为了解决这些问题， 拟议方案的目标如下：（一） 离子混合过程控制研究， 特别是减少离子辐照损伤 达到光子器件可接受的水平，（ii） 通过与初始的离子混合的器件的平面化 （二） 目标如果制造平面条形折射率引导激光器， 以及（iii）通过离子的单片器件集成 混合，驱动到调制器/激光器， 激光器/HBT集成。

Integration of photonic devices has been the subject of much research interest in recent years due to its implications for optical communication systems. However, the development of the fabrication processes involved in photonic integration has not been trivial due largely to the diversity in functions and consequently modes of operation of various photonic devices. Because of these requirements, many photonic device structures have poor compatibility for monolithic fabrication. There is an important need to develop better large scale manufacturable processes to facilitate photonic integration. We propose to investigate ion mixing as a process for planar integration of photonic devices made of quantum-well and superlattice structures. As a processing technique, ion mixing offers many advantages: (i) the process can be carried out at sufficiently low temperatures to allow for a self-aligned process, (ii) metallic ion masks for self-alignment purposes can serve as electrodes for devices, (iii) readily available noble gas ions are just as efficient as shallow dopant ions with similar atomic mass in causing disordering, and (iv) judiciously chosen ions can be used to induce disordering and to improve device isolation simultaneously. However, there are several issues that need to be resolved before ion-mixing becomes a useful process for photonic integration. The first issue is to understand the mixing process at a microscopic level so as to relate the intermixing of semiconductor materials and their properties such as bandgap, optical index, with or without strain involved. The second has to do with the material damage caused by ion-irradiation which can affect both the transport and the optical properties. Approaches to reduce this damage to a level acceptable to photonic integration will be investigated in this study. The third issue is to study how ion-mixing can be used in the formation of laser waveguide, a critical component of photonic technology. A fourth issue is to investigate the use of ion mixing in the improvement of heterojunction bipolar transistors. To address these issues, the proposed program has the following objectives: (i) investigation of process control of ion mixing, particularly the reduction of ion irradiation damage to a level acceptable for photonic devices, (ii) the planarization of devices by ion mixing with an initial (2) goal if fabricating planar stripe index guided lasers, and (iii) monolithic device integration by ion mixing, driving toward modulator/laser and laser/HBT integration.