A New Scheme for Monolithic Integration of III-V and Si for High Capacity Optical Communication and Networking

用于高容量光通信和网络的 III-V 族和 Si 单片集成的新方案

• 批准号: 0307247
• 负责人: Paul Kit Yu
• 金额: $ 27万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2007-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0307247&HistoricalAwards=false
• 关键词: New; Scheme; Monolithic; Integration; III

0307247YuIn this research program, the PI will study a relatively unexplored scheme for monolithic integration of III-V compounds and silicon using a metallic layer, intended for relieving the thermal mismatch and to provide linear electrical connections across the bonding interface. Introducing a metallic layer interfacing between heterogeneous materials will open new device concepts due to the different nature of carrier transport. Bonding layers, which provide low resistance contact at the bottom of optoelectronic devices located on a silicon chip, can readily facilitate current injection, and can increase light output efficiency by reflection. Furthermore, vertical electrical connections minimize the number of interconnections, and reduce thermal resistance to heat-sinks. The importance of combining light-emitting semiconductors with silicon integrated circuits on a single chip has long been recognized. This is because of the potentially tremendous improvement in speed, and efficiency of high-speed communications circuitry as a result of integration. Previous approaches towards monolithic integration such as epitaxial growth and wafer bonding face the difficulty of fundamental materials mismatch issues hindering full-scale wafer integration. This proposed research addresses the critical bonding issues of integrating dissimilar materials for enhanced performance of opto-electronic devices on Si chips. The investigation of compliant bonding for devices by studying a class of bonding reactions that involves transitions from liquid to solid to relieve thermal mismatch as bonding occurs. The reactions of the bonding system lead to low-resistance contact across the interface of the bonded pair. The bonding of GaAs and Si will be emphasized with exemplary devices as case studies. This program emphasizes fundamental materials and devices issues related to technology for very high capacity optical communication and networking. It also fosters collaboration with national and industrial laboratories, as well as training of students and modification of the graduate and the undergraduate curricula with research results.

0307247 YuIn this research program，PI将研究一种相对未开发的方案，用于使用金属层将III-V族化合物和硅进行单片集成，旨在缓解热失配，并在键合界面上提供线性电连接。由于载流子输运的不同性质，在异质材料之间引入金属层界面将打开新的器件概念。在位于硅芯片上的光电子器件的底部提供低电阻接触的接合层可以容易地促进电流注入，并且可以通过反射增加光输出效率。此外，垂直电连接使互连的数量最小化，并降低对散热器的热阻。将发光半导体与硅集成电路结合在一个芯片上的重要性早已被认识到。这是因为作为集成的结果，高速通信电路的速度和效率可能会有巨大的提高。以前的单片集成方法，如外延生长和晶片键合面临的困难，基本材料不匹配的问题，阻碍了全面的晶片集成。这项研究解决了关键的键合问题，集成不同的材料，以提高性能的光电器件上的硅芯片。通过研究一类键合反应来研究器件的柔性键合，该键合反应涉及从液体到固体的转变，以缓解键合发生时的热失配。键合系统的反应导致键合对的界面上的低电阻接触。 GaAs和Si的键合将以示例性器件作为案例研究来强调。该计划强调与超高容量光通信和网络技术相关的基本材料和器件问题。它还促进与国家和工业实验室的合作，以及学生的培训和研究成果的研究生和本科生课程的修改。