Metalorganic Chemical Vapor Deposition (MOCVD) for III-V Optoelectronic Device Research

用于 III-V 族光电器件研究的金属有机化学气相沉积 (MOCVD)

• 批准号: 8809779
• 负责人: Paul Kit Yu
• 金额: $ 3万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-09-01 至 1990-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8809779&HistoricalAwards=false
• 关键词: Metalorganic; Chemical; Vapor; Deposition; MOCVD

This proposal is a Major Research Equipment Request for establishing a Metalorganic Chemical Vapor Deposition (MOCVD) facility at the University of California at San Diego (UCSD). The proposed facility will mainly provide advanced semiconductor materials for optoelectronic device and material research efforts at UCSD. The portion of the support from UCSD will be used for purchasing a basic MOCVD reactor, and the portion requested of NSF will be used to obtain the needed accessories to operate the reactor. These accessories include a vacuum pump with controlling system, a hydrogen purifier, a toxic gas monitor, and temperature baths to metalorganic sources. This proposal also describes various present and future III-V semiconductor optoelectronic device research projects that can be benefitted by this facility.

本建议书是一份主要研究设备申请， 金属有机化学气相沉积（MOCVD）设施 加州大学圣地亚哥分校。 拟议设施 将主要提供先进的半导体材料， 光电子器件和材料的研究工作。 的 UCSD的部分支持将用于购买基本的 MOCVD反应器，NSF要求的部分将用于获得 操作反应堆所需的附件 这些配件 包括具有控制系统真空泵、氢气净化器、 有毒气体监测器和温度浴到金属有机源。 该提案还描述了目前和未来的各种III-V 半导体光电器件研究项目，可以 受益于这一设施。