Metalorganic Chemical Vapor Deposition (MOCVD) for III-V Optoelectronic Device Research

这项提案是在加州大学圣地亚哥分校(UCSD)建立金属有机化学气相沉积(MOCVD)设施的主要研究设备请求。拟建的设施将主要为加州大学圣迭戈分校的光电子器件和材料研究工作提供先进的半导体材料。UCSD提供的部分支持将用于购买一个基本的MOCVD反应堆，向NSF申请的部分将用于获得运行该反应堆所需的配件。这些配件包括一个带控制系统的真空泵、一个氢气净化器、一个有毒气体监测器，以及金属有机污染源的温水浴。该建议书还介绍了该设施可能受益于的各种现在和未来的III-V半导体光电子器件研究项目。

This proposal is a Major Research Equipment Request for establishing a Metalorganic Chemical Vapor Deposition (MOCVD) facility at the University of California at San Diego (UCSD). The proposed facility will mainly provide advanced semiconductor materials for optoelectronic device and material research efforts at UCSD. The portion of the support from UCSD will be used for purchasing a basic MOCVD reactor, and the portion requested of NSF will be used to obtain the needed accessories to operate the reactor. These accessories include a vacuum pump with controlling system, a hydrogen purifier, a toxic gas monitor, and temperature baths to metalorganic sources. This proposal also describes various present and future III-V semiconductor optoelectronic device research projects that can be benefitted by this facility.