Metalorganic Chemical Vapor Deposition (MOCVD) for III-V Optoelectronic Device Research

该提案是在加州大学圣地亚哥分校（UCSD）建立金属有机化学气相沉积（MOCVD）设施的主要研究设备请求。该设施将主要为加州大学圣地亚哥分校的光电器件和材料研究工作提供先进的半导体材料。来自加州大学圣地亚哥分校的支持部分将用于购买基本的MOCVD反应器，而美国国家科学基金会要求的部分将用于获得运行反应器所需的附件。这些配件包括一个控制系统的真空泵，一个氢净化器，一个有毒气体监测器，和温度浴到金属有机源。本计划书亦描述了目前及未来可受惠于本设施的III-V型半导体光电器件研究项目。

This proposal is a Major Research Equipment Request for establishing a Metalorganic Chemical Vapor Deposition (MOCVD) facility at the University of California at San Diego (UCSD). The proposed facility will mainly provide advanced semiconductor materials for optoelectronic device and material research efforts at UCSD. The portion of the support from UCSD will be used for purchasing a basic MOCVD reactor, and the portion requested of NSF will be used to obtain the needed accessories to operate the reactor. These accessories include a vacuum pump with controlling system, a hydrogen purifier, a toxic gas monitor, and temperature baths to metalorganic sources. This proposal also describes various present and future III-V semiconductor optoelectronic device research projects that can be benefitted by this facility.