Laser Interferometric Techniques for Temperature Measurement
Laser Interferometric Techniques for Temperature Measurement
批准号:
9361178
负责人:
Saleem Zaidi
金额:
$6.47万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-01-15 至 1994-12-31
中文摘要
[9361178]提出了激光在半导体晶圆非接触测温中的应用。该技术既可以应用于化学气相沉积,也可以应用于快速热加工系统。该方法基于半导体晶圆的热膨胀,并使用晶圆背面(粗糙表面)产生的散斑图案。由两个对称入射的激光束相干照射产生散斑图案。在不同温度下记录斑点图案,并从已知温度下存储的初始帧中减去。当条纹数量接近典型散斑大小时,进行散斑去相关。通过在数据采集和处理系统中加入单步相移,提高了散斑条纹的信噪比。温度测量高达400度演示与一个单一的参考存储框架。利用散斑条纹图的快速傅立叶变换计算提取温度信息的散斑条纹周期。对这些技术进行了详细的研究,提出了高达1000度的斑点温度测量。1. 在RTP和CVD系统中的潜在应用。2. 改进材料合成,在制造过程中使用更好的温度。*** *** *是t我$ $ (f /!!/ 1快递标志& & Arial 5 Courier New !* * * * " h B % B % (C R:\WW20USER\ABSTRACT。DOT丹尼斯·亨利丹尼斯·亨利
英文摘要
9361178 Zaidi Laser application for noncontact temperature measurement of a semiconductor wafer is proposed. The technique can be applied for either chemical vapor deposition or rapid thermal processing systems. The method is based on thermal expansion of a semiconductor wafer, and uses speckle patterns generated from the back side (rough surface) of the wafer. Speckle patterns are generated by coherent illumination by two symmetrically incident laser beams. Speckle patterns are recorded at various temperatures and subtracted from an initial frame stored at a known temperature. Speckle decorrelation takes place as number of fringes approaches typical speckle size. Signal-to-noise ratio of the speckle fringes is improved by incorporating single-step phase shift in our data acquisition and processing system. Temperature measurements up to 400-deg are demonstrated with a single reference stored frame. Fast Fourier Transform of speckle fringe patterns is applied for calculation of speckle fringe period of extract temperature information. A detailed investigation of these techniques is proposed for speckle temperature measurements up to 1000-deg. 1. Potential applications in RTP and CVD systems. 2. Improvement in material synthesis using better temperature during fabrication. *** v s t I $ $ ( F / ! ! / 1 Courier Symbol & Arial 5 Courier New ! X X X " h B % B % ( C R:\WW20USER\ABSTRACT.DOT Denise Henry Denise Henry
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会议论文
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批准号:0930307
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2009
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负责人:Saleem Zaidi
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依托单位:
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依托单位:
SBIR Phase I: Subwavelength Structures for Enhanced Absorption in Thin Silicon Films
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批准号:0109271
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2001
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依托单位:
SBIR Phase I: Randomly Textured Nanoscale Surfaces for Silicon Solar Cells
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2000
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负责人:Saleem Zaidi
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依托单位:
海外基金