SBIR Phase II: Randomly Textured Nanoscale Surfaces for Silicon Solar Cells

SBIR 第二阶段：硅太阳能电池的随机纹理纳米级表面

• 批准号: 0109098
• 负责人: Saleem Zaidi
• 金额: $ 47.26万
• 依托单位: Gratings, Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-01-01 至 2005-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109098&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Randomly; Textured

This Small Business Innovation Research (SBIR) Phase II project will integrate random, reactive ion etching (RIE) texturing techniques into low-cost, multi-crystalline (mc) silicon (Si) solar cells. RIE texturing techniques, developed in Phase I, are distinguished by their low-reflection (1 percent), large area (200 square centimeters) application, and the ability to control etched profiles. This texture control has been employed to increase near infrared absorption in Si by enhanced oblique optical coupling into the substrate. RIE-texturing techniques have potential application in several fields including low-cost substrates for surface enhanced Raman scattering and field emission devices. Phase II will be concerned with conformal emitter formation techniques uniquely suited to RIE-textured surfaces. These methods will lead to solar cell manufacturing in a cluster environment with similar chambers for texturing, emitter formation, and nitride films for surface passivation.Potential industrial applications are expected in high-efficiency, RIE-textured, mc-Si solar cells using processes suitable for their respective manufacturing environments.

这个小型企业创新研究（SBIR）第二阶段项目将把随机反应离子蚀刻（RIE）纹理技术集成到低成本的多晶硅（MC）太阳能电池中。 在第一阶段开发的RIE纹理技术的特点是低反射（1%）、大面积（200平方厘米）应用以及控制蚀刻轮廓的能力。 这种纹理控制已被用来增加近红外吸收的Si通过增强倾斜的光学耦合到基板。 反应离子刻蚀织构技术在包括用于表面增强拉曼散射和场发射器件的低成本衬底的几个领域中具有潜在的应用。 第二阶段将关注与共形发射极形成技术，特别适合RIE纹理表面。 这些方法将导致太阳能电池制造在集群环境中与类似的腔室的纹理，发射极的形成，和氮化膜的表面passivation.Potential的工业应用，预计在高效率，RIE纹理，mc-Si太阳能电池使用适合各自的制造环境的工艺。