Optimal Control of the Czochralski Crystallization Process

直拉结晶过程的优化控制

• 批准号: 9400775
• 负责人: Warren Seider
• 金额: $ 29万
• 依托单位: University of Pennsylvania
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9400775&HistoricalAwards=false
• 关键词: Optimal; Control; Czochralski; Crystallization; Process

9400775 Seider The award is for better control of the Czochralski crystallization process so that larger diameter wafers of silicon and other compound semiconductors can be grown with fewer defects. The effort will concentrate on development of better reduced-order models which take into account resistances across boundary layers. Sensors will also be developed to measure temperatures at the crucible wall and to measure atomic oxygen concentrations in the crystal. Finally, model-predictive controllers will be developed to achieve better control of the crystal growth process. Experiments will be conducted at the site of the industrial partner to validate the researched refinements in modeling, sensor development, and controller development. Improved control of the Czochralski crystallization process is expected to lead to the ability to grow larger diameter crystals of silicon and other compound semiconductor materials with fewer defects, which would be of value to the semiconductor industry. Furthermore, the sensor developments are expected to result in better understanding of the crystal growth process. The reduced order model development work is expected to be of value in modeling a variety of materials processing applications involving melt processing for purposes of control.

小行星9400775 该奖项是为了更好地控制直拉晶化过程，使更大直径的硅和其他化合物半导体晶片可以生长较少的缺陷。 这项工作将集中于开发更好的降阶模型，其中考虑到边界层阻力。 还将开发传感器来测量坩埚壁的温度和测量晶体中的原子氧浓度。 最后，将开发模型预测控制器，以实现更好的控制晶体生长过程。 实验将在工业合作伙伴的现场进行，以验证在建模，传感器开发和控制器开发方面的研究改进。 预期对直拉结晶工艺的改进控制将导致生长具有较少缺陷的硅和其它化合物半导体材料的较大直径晶体的能力，这将对半导体工业有价值。 此外，传感器的发展，预计将导致更好地了解晶体生长过程。 降阶模型的开发工作，预计将在建模的各种材料加工应用程序，涉及熔融加工控制的目的是有价值的。